铅（Mg1/3Nb2/3）O3-铅（Zn1/3Nb2/3）O3 单晶的相组成、弛豫行为和应变性能

IF 3.9 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Science and Engineering B-advanced Functional Solid-state Materials Pub Date : 2024-11-04 DOI:10.1016/j.mseb.2024.117796

Aiguo He , Shuwei Tang , Fayun Tang , Wei Long , Zengzhe Xi , Weiguo Liu

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引用次数: 0

摘要

为开发具有高应变和低滞后的弛豫器材料，设计并生长了 Pb（Mg1/3Nb2/3）O3- Pb（Zn1/3Nb2/3）O3（PMN-PZN）晶体。生长出的晶体呈淡黄色，最大尺寸为 13 × 10 × 8 mm3。里特维尔德细化和室温下的畴构型证实了立方相和斜方体相共存，且立方相占优势。生长晶体的居里温度略低于室温，并显示出强烈的频率依赖性。强介电弛豫器的性能通过不同方式得到了证明。在温度为 26 ℃、电场为 35 kV/cm 时，饱和极化达到 22.62 μC/cm2，残余极化几乎为零，应变约为 0.1 %，磁滞度为 4 ∼ 5 %。适中的应变和低滞后使 PMN-PZN 晶体在高精度致动器中具有潜在的应用前景。此外，还观察了电场下的原位畴演化，以了解极化和应变行为。

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The phase composition, relaxor behavior and strain performance of the Pb(Mg1/3Nb2/3)O3-Pb(Zn1/3Nb2/3)O3 single crystal

For exploiting relaxor materials with high strain and low hysteresis, Pb(Mg_1/3Nb_2/3)O₃– Pb(Zn_1/3Nb_2/3)O₃ (PMN-PZN) crystal was designed and grown. The grown crystal is light yellow with a maximum size of 13 × 10 × 8 mm³. Rietveld refinement and domain configuration at room temperature confirm the coexistence of cubic and rhombohedral phases, and the cubic phase is dominant. The Curie temperature of the grown crystal is slightly lower than room temperature and shows a strong frequency dependence. Strong dielectric relaxor performance is demonstrated by means of different ways. At a temperature of 26 ℃ and an electric field of 35 kV/cm, the saturation polarization reaches 22.62 μC/cm², the residual polarization is almost zero, the strain is about 0.1 %, and the hysteresis degree is 4 ∼ 5 %. Moderate strain and low hysteresis make PMN-PZN crystal display potential application in high-precision actuators. Moreover, in-situ domain evolution under an electric field was observed to understand the polarization and strain behaviors.

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来源期刊

Materials Science and Engineering B-advanced Functional Solid-state Materials 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.