在高微波功率密度的 H2-CH4-O2 混合气体中通过微波等离子体化学气相沉积生长同位外延单晶金刚石

IF 4.3 3区材料科学 Q2 MATERIALS SCIENCE, COATINGS & FILMS

Diamond and Related Materials Pub Date : 2024-10-30 DOI:10.1016/j.diamond.2024.111721

A.P. Bolshakov , V.Yu. Yurov , I.A. Fedorova , A.K. Martyanov , P.V. Fedotov , A.F. Popovich , V.G. Ralchenko , B. Dai

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引用次数: 0

摘要

在含氧混合气体中通过微波等离子体辅助 CVD 生长单晶金刚石具有很大的吸引力，因为这种方法可以实现长时间的非停滞合成过程，并最大限度地减少生成材料中的缺陷和杂质。我们研究了在 H2-CH4-O2 环境中，在高压（300 托）和高微波功率密度（≈400 W/cm3）条件下，在等离子体中不同的氧气含量（高达 3.5%）条件下，在（100）取向基底上生长同向外延金刚石的情况。低相干光学干涉仪和光学发射（OE）光谱法分别用于现场测量生长率和探测等离子体化学性质。根据 CH4 含量的不同，生长速率与[O2]浓度的关系要么在一定的[O2]浓度下显示最大值，要么单调下降，直到混合物中某个临界 O2 百分比（针对每种甲烷含量）完全停止生长。我们发现，等离子体 OE 光谱中的 CH、Hβ、C2 和 C3 线随着 O2 的加入而单调淬灭，特别是 C2 线的消失与生长率归零相吻合。在最佳气体成分条件下，以中等生长速度生产出了高质量的同外延金刚石层，并用拉曼光谱对其进行了表征。此外，还观察到由于添加了氧气，(111) 取向基底上的应力明显降低。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Growth of homoepitaxial single crystal diamond by microwave plasma CVD in H2-CH4-O2 gas mixtures at high microwave power densities

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Growth of homoepitaxial single crystal diamond by microwave plasma CVD in H2-CH4-O2 gas mixtures at high microwave power densities

Single crystal diamond growth by microwave plasma assisted CVD in oxygen-containing gas mixtures is attractive in view of possibility to realize a prolonged non-stoped synthesis process and to minimize defects and impurities in the produced material. We studied the homoepitaxial diamond growth on (100) oriented substrates in H₂-CH₄-O₂ environment at high pressures (300 Torr) and high microwave power density (≈400 W/cm³) at variable O₂ content (up to 3.5 %) in the plasma. A low-coherence optical interferometry and optical emission (OE) spectroscopy was used to measure in situ the growth rate and probe the plasma chemistry, respectively. Depending on CH₄ content the growth rate dependence on the concentration [O₂] either shows a maximum at certain [O₂], or a monotonic decline, up to complete stop of the growth at some critical O₂ percentage (specific for each methane content) in the mixture. We found CH, H_β, C₂ and C₃ lines in OE spectra from the plasma to monotonically quenched with O₂ adding, particularly, disappearance of the C₂ line coincidences with growth rate going to zero. High-quality homoepitaxial diamond layers were produced at moderate growth rate at optimal gas composition and characterized with Raman spectroscopy. Moreover, a significant reduction in the stress on (111) oriented substrates owing to O₂ addition was observed.

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来源期刊

Diamond and Related Materials 工程技术-材料科学：综合

CiteScore

6.00

自引率

14.60%

发文量

702

审稿时长

2.1 months

期刊介绍： DRM is a leading international journal that publishes new fundamental and applied research on all forms of diamond, the integration of diamond with other advanced materials and development of technologies exploiting diamond. The synthesis, characterization and processing of single crystal diamond, polycrystalline films, nanodiamond powders and heterostructures with other advanced materials are encouraged topics for technical and review articles. In addition to diamond, the journal publishes manuscripts on the synthesis, characterization and application of other related materials including diamond-like carbons, carbon nanotubes, graphene, and boron and carbon nitrides. Articles are sought on the chemical functionalization of diamond and related materials as well as their use in electrochemistry, energy storage and conversion, chemical and biological sensing, imaging, thermal management, photonic and quantum applications, electron emission and electronic devices. The International Conference on Diamond and Carbon Materials has evolved into the largest and most well attended forum in the field of diamond, providing a forum to showcase the latest results in the science and technology of diamond and other carbon materials such as carbon nanotubes, graphene, and diamond-like carbon. Run annually in association with Diamond and Related Materials the conference provides junior and established researchers the opportunity to exchange the latest results ranging from fundamental physical and chemical concepts to applied research focusing on the next generation carbon-based devices.