激光加热基座生长法生长的 YAlO3:Ce 闪烁单晶光纤的光学和闪烁特性

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2024-10-29 DOI:10.1016/j.jcrysgro.2024.127938

Yuke Ou , Xibin Wang , Xu Wu , Huamin Kou , Anhua Wu , Liangbi Su

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引用次数: 0

摘要

掺杂铈的钇铝高闪石（YAP:Ce）单晶体是公认的现代高效闪烁体，具有光输出高、衰减时间快、发射峰与光电倍增管的接收范围相匹配等特点。因此，它在高能物理、核医学、工业检测等领域的应用前景十分广阔。在这项工作中，采用改进的激光加热基座生长（LHPG）方法成功地生长出了 0.5 at% 的 YAP:Ce 闪烁晶体。该晶体的光输出高达 13,754 ph./MeV，衰变时间常数短至 28.62 ns，并在 X 射线激发发光光谱中显示出 382 nm 处的辐射发光峰。

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Optical and scintillation properties of YAlO3:Ce scintillating single crystal fibers grown by laser heated pedestal growth method

Ce-doped yttrium aluminum perovskite (YAP:Ce) single crystal is recognized as modern, efficient scintillators with high light output, fast decay time, and emission peaks that match well with the receiving range of photomultiplier tubes. This makes it highly promising for applications in high energy physics, nuclear medicine, industrial detection and so on. In this work, 0.5 at% YAP:Ce scintillating crystals was successfully grown by a modified laser-heated pedestal growth (LHPG) method. The crystal exhibited a high light output of 13,754 ph./MeV, a short decay time constant of 28.62 ns, and a radioluminescence peak at 382 nm as shown in X-ray excited luminescence spectra.

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.