利用化学气相沉积技术控制二维 MoS2/WSe2 异质结构太阳能电池的生长

IF 3.9 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Science and Engineering B-advanced Functional Solid-state Materials Pub Date : 2024-11-02 DOI:10.1016/j.mseb.2024.117787

C. Sreelakshmi , Pamula Siva , Rajesh Yalambaku , M. Ghanashyam Krishna , Kuraganti Vasu

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引用次数: 0

摘要

开发高质量的 II 型半导体异质结构对太阳能转换应用至关重要。在此，我们报告了采用一步化学气相沉积法依次生长 MoS2/WSe2 二维半导体 II 型异质结构的过程。形态、拉曼和化学分析显示，WSe2 层沉积在菱形 MoS2 上，形成垂直的 MoS2/WSe2 异质结构。利用生长的异质结构制造的太阳能电池具有光电响应，转换效率为 2.5%，开路电压为 0.22 V。数值模拟研究揭示了 MoS2/WSe2 异质结构太阳能电池中的电荷分离和传输机制。

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Controlled growth of two-dimensional MoS2/WSe2 heterostructure solar cell by chemical vapor deposition

The development of high-quality type II semiconductor heterostructures is crucial for solar energy conversion applications. Here, we report the sequential growth of MoS₂/WSe₂ two-dimensional semiconductor type II heterostructure using a one-step chemical vapor deposition. The morphological, Raman, and chemical analysis revealed that the WSe₂ layer is deposited on the rhombus-shaped MoS₂, forming a vertical MoS₂/WSe₂ heterostructure. The solar cell fabricated using the grown heterostructure exhibits a photovoltaic response with a conversion efficiency of 2.5 % and an open circuit voltage of 0.22 V, respectively. The numerical simulation study unravels the mechanism of charge separation and transport in the MoS₂/WSe₂ heterostructure solar cell.

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来源期刊

Materials Science and Engineering B-advanced Functional Solid-state Materials 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.