通过优化沉积和退火温度提高四溅镀 CIGS 吸收层的结晶度特性

IF 2.7 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
M.S. Bahrudin , A.Z. Arsad , M.N.A. Rahman , S.F. Abdullah , A.W.M. Zuhdi
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引用次数: 0

摘要

本研究提出了一种通过退火技术提高铜铟镓硒(CIGS)吸收层性能的方法,这种退火技术可提高沉积 CIGS 薄膜的质量。利用射频磁控溅射技术在 300 ℃、400 ℃ 和 500 ℃ 下将 CIGS 薄膜沉积在钠钙玻璃基底上,然后在 500 ℃ 下退火 30 分钟。通过退火,CIGS 薄膜的晶体结构得以排列整齐,表面应变最小。退火能显著提高薄膜的结晶度、晶粒尺寸、载流子浓度、迁移率和能隙。温度越高,结晶度越高,结晶晶粒尺寸越大,电阻率越低。这些特性的改善对于优化 CIGS 吸收层的性能至关重要。300 °C 下的完整 CIGS 太阳能电池产生 Voc = 253 mV、Jsc = 1.78 mA/cm2、效率 = 0.15 %。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Improving the crystallinity of quaternary sputtered CIGS absorber layer properties via optimized deposition and annealing temperature
This study presents a method to improve Cu(In1−xGax)Se2 (CIGS) absorber layer performance through an annealing technique that enhances the quality of as-deposited CIGS films. CIGS films were deposited on soda-lime glass substrates using RF magnetron sputtering at 300 °C, 400 °C, and 500 °C, followed by annealing at 500 °C for 30 min. By annealing, the crystal structure of the CIGS films is aligned, and surface strain is minimized. It can significantly boost the films’ crystallinity, crystallite sizes, carrier concentration, mobility, and energy gap. The highest temperatures enhanced crystallinity due to larger crystallite size, resulting in lower resistivity. The properties improvements are crucial for optimizing CIGS absorber layer performance. Complete CIGS solar cell at 300 °C yield Voc = 253 mV, Jsc = 1.78 mA/cm2, and efficiency = 0.15 %.
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来源期刊
Materials Letters
Materials Letters 工程技术-材料科学:综合
CiteScore
5.60
自引率
3.30%
发文量
1948
审稿时长
50 days
期刊介绍: Materials Letters has an open access mirror journal Materials Letters: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review. Materials Letters is dedicated to publishing novel, cutting edge reports of broad interest to the materials community. The journal provides a forum for materials scientists and engineers, physicists, and chemists to rapidly communicate on the most important topics in the field of materials. Contributions include, but are not limited to, a variety of topics such as: • Materials - Metals and alloys, amorphous solids, ceramics, composites, polymers, semiconductors • Applications - Structural, opto-electronic, magnetic, medical, MEMS, sensors, smart • Characterization - Analytical, microscopy, scanning probes, nanoscopic, optical, electrical, magnetic, acoustic, spectroscopic, diffraction • Novel Materials - Micro and nanostructures (nanowires, nanotubes, nanoparticles), nanocomposites, thin films, superlattices, quantum dots. • Processing - Crystal growth, thin film processing, sol-gel processing, mechanical processing, assembly, nanocrystalline processing. • Properties - Mechanical, magnetic, optical, electrical, ferroelectric, thermal, interfacial, transport, thermodynamic • Synthesis - Quenching, solid state, solidification, solution synthesis, vapor deposition, high pressure, explosive
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