Arulmani Marimuthu, Venkatraj Athikesavan, Sinitha B. Nair, G. Thilakavathi
{"title":"伽马射线辐照对掺钕铷钛磷酸盐单晶体(Nd:RbTiOPO4)的光学、介电、铁电和铁电疲劳特性的影响","authors":"Arulmani Marimuthu, Venkatraj Athikesavan, Sinitha B. Nair, G. Thilakavathi","doi":"10.1007/s10854-024-13764-1","DOIUrl":null,"url":null,"abstract":"<div><p>Neodymium doped rubidium titanyl phosphate single crystal was grown from the high-temperature flux technique. To investigate the material stability in the radiation background, for the first-time neodymium doped rubidium titanyl phosphate single crystal was subjected to gamma ray irradiation. After the irradiation of the 2.6-kGy gamma-radiation, the material’s optical and electrical properties were analyzed and the results have been compared to that of non irradiated Nd: RTP single crystal. A small absorption band was found in the visible region around 0.08 higher than the non -irradiated Nd: RTP single crystal and there is a small variations in the band gap energy, 3.61 eV for non -irradiated Nd: RTP single crystal and 3.54 eV for gamma irradiated Nd: RTP single crystal. The dielectric constant, dielectric loss, and AC conductivity was observed for non-irradiated and gamma irradiated Nd: RTP single crystals. The Gamma radiation irradiated Nd: RTP single crystal shows little higher value of dielectric constant, loss and conductivity around 0.07, 0.05 and 1.2 S/cm from the non irradiated sample respectively. From the ferroelectric studies there is an increase in polarization and coercive field were observed in the gamma-ray irradiated sample from that of non-irradiated Nd: RTP single crystal. This can be attributed to radiation-induced defects is local strains and movements of ions inside the crystal. Besides the Gamma irradiated sample shows fatigue free nature over the 5000 cyclic period. The gamma-ray induced a defect in material but not far away from application requirements and the radiation effect had been removed through the thermal annealing process.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 31","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Gamma ray irradiation effect on optical, dielectric, ferroelectric and ferroelectric fatigue properties of neodymium doped rubidium titanyl phosphate single crystal (Nd:RbTiOPO4)\",\"authors\":\"Arulmani Marimuthu, Venkatraj Athikesavan, Sinitha B. Nair, G. Thilakavathi\",\"doi\":\"10.1007/s10854-024-13764-1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Neodymium doped rubidium titanyl phosphate single crystal was grown from the high-temperature flux technique. To investigate the material stability in the radiation background, for the first-time neodymium doped rubidium titanyl phosphate single crystal was subjected to gamma ray irradiation. After the irradiation of the 2.6-kGy gamma-radiation, the material’s optical and electrical properties were analyzed and the results have been compared to that of non irradiated Nd: RTP single crystal. A small absorption band was found in the visible region around 0.08 higher than the non -irradiated Nd: RTP single crystal and there is a small variations in the band gap energy, 3.61 eV for non -irradiated Nd: RTP single crystal and 3.54 eV for gamma irradiated Nd: RTP single crystal. The dielectric constant, dielectric loss, and AC conductivity was observed for non-irradiated and gamma irradiated Nd: RTP single crystals. The Gamma radiation irradiated Nd: RTP single crystal shows little higher value of dielectric constant, loss and conductivity around 0.07, 0.05 and 1.2 S/cm from the non irradiated sample respectively. From the ferroelectric studies there is an increase in polarization and coercive field were observed in the gamma-ray irradiated sample from that of non-irradiated Nd: RTP single crystal. This can be attributed to radiation-induced defects is local strains and movements of ions inside the crystal. Besides the Gamma irradiated sample shows fatigue free nature over the 5000 cyclic period. The gamma-ray induced a defect in material but not far away from application requirements and the radiation effect had been removed through the thermal annealing process.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"35 31\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-11-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-13764-1\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13764-1","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Gamma ray irradiation effect on optical, dielectric, ferroelectric and ferroelectric fatigue properties of neodymium doped rubidium titanyl phosphate single crystal (Nd:RbTiOPO4)
Neodymium doped rubidium titanyl phosphate single crystal was grown from the high-temperature flux technique. To investigate the material stability in the radiation background, for the first-time neodymium doped rubidium titanyl phosphate single crystal was subjected to gamma ray irradiation. After the irradiation of the 2.6-kGy gamma-radiation, the material’s optical and electrical properties were analyzed and the results have been compared to that of non irradiated Nd: RTP single crystal. A small absorption band was found in the visible region around 0.08 higher than the non -irradiated Nd: RTP single crystal and there is a small variations in the band gap energy, 3.61 eV for non -irradiated Nd: RTP single crystal and 3.54 eV for gamma irradiated Nd: RTP single crystal. The dielectric constant, dielectric loss, and AC conductivity was observed for non-irradiated and gamma irradiated Nd: RTP single crystals. The Gamma radiation irradiated Nd: RTP single crystal shows little higher value of dielectric constant, loss and conductivity around 0.07, 0.05 and 1.2 S/cm from the non irradiated sample respectively. From the ferroelectric studies there is an increase in polarization and coercive field were observed in the gamma-ray irradiated sample from that of non-irradiated Nd: RTP single crystal. This can be attributed to radiation-induced defects is local strains and movements of ions inside the crystal. Besides the Gamma irradiated sample shows fatigue free nature over the 5000 cyclic period. The gamma-ray induced a defect in material but not far away from application requirements and the radiation effect had been removed through the thermal annealing process.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.