Aruna A. Mancharkar, Milind R. Bodke, Dhanaji B. Malavekar, Shoyebmohamad F. Shaikh, Abdullah M. Al-Enizi, Jin Hyeok Kim, Sandesh R. Jadkar, Habib M. Pathan
{"title":"利用 SILAR 法合成高性能超级电容器用氢氧化锌 Zn(OH)2 薄膜并确定其特性","authors":"Aruna A. Mancharkar, Milind R. Bodke, Dhanaji B. Malavekar, Shoyebmohamad F. Shaikh, Abdullah M. Al-Enizi, Jin Hyeok Kim, Sandesh R. Jadkar, Habib M. Pathan","doi":"10.1007/s10854-024-13768-x","DOIUrl":null,"url":null,"abstract":"<div><p>Zinc hydroxide [Zn(OH)<sub>2</sub>] is a multifaceted substance with significant potential in diverse domains such as energy storage, catalysis, and environmental cleanup. Zn(OH)<sub>2</sub> is appropriate for pseudocapacitor applications because of its strong electrochemical activity, cost-effectiveness, and environmentally favorable features. In this investigation, we have effectively synthesized nanoflakes of zinc hydroxide [Zn(OH)<sub>2</sub>] as electrode material on stainless steel substrates for supercapacitor applications using the successive ionic layer adsorption and reaction (SILAR) technique. The performance of the electrode material is enhanced by nanoflakes, which encourage electrolyte diffusion and provide more channels for ion migration. Optical absorption analysis unveiled a direct band transition, showcasing a band gap of 3.35 eV. The synthesized material underwent characterization through scanning electron microscopy (SEM) and X-ray diffraction (XRD), confirming their well-defined morphology and crystalline structure with uniform distribution. The cyclic voltammetry as well as galvanostatic charge–discharge experiments were performed in a three-electrode configuration using a 1 M KOH aqueous electrolyte. The electrochemical results demonstrated that the Zn(OH)<sub>2</sub> nanoflakes thin film electrode revealed a remarkable specific capacitance of 123 F g<sup>−1</sup> at a current density of 1 A g<sup>−1</sup>. Additionally, it displayed an extended cycling lifespan, retaining 72% of its original capacitance even afterward undergoing 5000 cycles at a scan rate of 100 mV s<sup>−1</sup>.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 31","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Synthesis and characterization of zinc hydroxide Zn(OH)2 thin film for high-performance supercapacitors using SILAR method\",\"authors\":\"Aruna A. Mancharkar, Milind R. Bodke, Dhanaji B. Malavekar, Shoyebmohamad F. Shaikh, Abdullah M. Al-Enizi, Jin Hyeok Kim, Sandesh R. Jadkar, Habib M. Pathan\",\"doi\":\"10.1007/s10854-024-13768-x\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Zinc hydroxide [Zn(OH)<sub>2</sub>] is a multifaceted substance with significant potential in diverse domains such as energy storage, catalysis, and environmental cleanup. Zn(OH)<sub>2</sub> is appropriate for pseudocapacitor applications because of its strong electrochemical activity, cost-effectiveness, and environmentally favorable features. In this investigation, we have effectively synthesized nanoflakes of zinc hydroxide [Zn(OH)<sub>2</sub>] as electrode material on stainless steel substrates for supercapacitor applications using the successive ionic layer adsorption and reaction (SILAR) technique. The performance of the electrode material is enhanced by nanoflakes, which encourage electrolyte diffusion and provide more channels for ion migration. Optical absorption analysis unveiled a direct band transition, showcasing a band gap of 3.35 eV. The synthesized material underwent characterization through scanning electron microscopy (SEM) and X-ray diffraction (XRD), confirming their well-defined morphology and crystalline structure with uniform distribution. The cyclic voltammetry as well as galvanostatic charge–discharge experiments were performed in a three-electrode configuration using a 1 M KOH aqueous electrolyte. The electrochemical results demonstrated that the Zn(OH)<sub>2</sub> nanoflakes thin film electrode revealed a remarkable specific capacitance of 123 F g<sup>−1</sup> at a current density of 1 A g<sup>−1</sup>. Additionally, it displayed an extended cycling lifespan, retaining 72% of its original capacitance even afterward undergoing 5000 cycles at a scan rate of 100 mV s<sup>−1</sup>.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"35 31\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-11-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-13768-x\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13768-x","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
氢氧化锌[Zn(OH)2]是一种多面体物质,在储能、催化和环境清洁等不同领域具有巨大潜力。Zn(OH)2 具有很强的电化学活性、成本效益高和环保等特点,因此非常适合伪电容器的应用。在这项研究中,我们采用连续离子层吸附和反应(SILAR)技术,在不锈钢基底上有效合成了纳米片状氢氧化锌[Zn(OH)2]作为超级电容器应用的电极材料。纳米片促进了电解质的扩散,为离子迁移提供了更多通道,从而提高了电极材料的性能。光学吸收分析揭示了直接的带跃迁,显示出 3.35 eV 的带隙。通过扫描电子显微镜(SEM)和 X 射线衍射(XRD)对合成材料进行表征,证实了其清晰的形貌和均匀分布的晶体结构。在使用 1 M KOH 水电解液的三电极配置中进行了循环伏安法和电致静态充放电实验。电化学结果表明,在电流密度为 1 A g-1 时,纳米片状 Zn(OH)2 薄膜电极的比电容高达 123 F g-1。此外,它还显示出更长的循环寿命,在 100 mV s-1 的扫描速率下循环 5000 次后,仍能保持 72% 的原始电容。
Synthesis and characterization of zinc hydroxide Zn(OH)2 thin film for high-performance supercapacitors using SILAR method
Zinc hydroxide [Zn(OH)2] is a multifaceted substance with significant potential in diverse domains such as energy storage, catalysis, and environmental cleanup. Zn(OH)2 is appropriate for pseudocapacitor applications because of its strong electrochemical activity, cost-effectiveness, and environmentally favorable features. In this investigation, we have effectively synthesized nanoflakes of zinc hydroxide [Zn(OH)2] as electrode material on stainless steel substrates for supercapacitor applications using the successive ionic layer adsorption and reaction (SILAR) technique. The performance of the electrode material is enhanced by nanoflakes, which encourage electrolyte diffusion and provide more channels for ion migration. Optical absorption analysis unveiled a direct band transition, showcasing a band gap of 3.35 eV. The synthesized material underwent characterization through scanning electron microscopy (SEM) and X-ray diffraction (XRD), confirming their well-defined morphology and crystalline structure with uniform distribution. The cyclic voltammetry as well as galvanostatic charge–discharge experiments were performed in a three-electrode configuration using a 1 M KOH aqueous electrolyte. The electrochemical results demonstrated that the Zn(OH)2 nanoflakes thin film electrode revealed a remarkable specific capacitance of 123 F g−1 at a current density of 1 A g−1. Additionally, it displayed an extended cycling lifespan, retaining 72% of its original capacitance even afterward undergoing 5000 cycles at a scan rate of 100 mV s−1.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.