A. I. Najafov, T. G. Mammadov, Kh. V. Aliguliyeva, S. Sh. Gahramanov, V. B. Aliyeva, V. N. Zverev, N. A. Abdullayev
{"title":"掺锰 Bi0.9Sb0.1 固溶体的低温导电性","authors":"A. I. Najafov, T. G. Mammadov, Kh. V. Aliguliyeva, S. Sh. Gahramanov, V. B. Aliyeva, V. N. Zverev, N. A. Abdullayev","doi":"10.1134/S1063783424601358","DOIUrl":null,"url":null,"abstract":"<p>The temperature dependence of the specific electrical resistance of the semiconductor single-crystal Bi<sub>0.9</sub>Sb<sub>0.1</sub> solid solution doped with 1% Mn is shown to have, with a decrease in temperature, the activation character of the band electrical conductivity with the activation energy 10 meV that is changed at temperatures below 20 K for the “metallic” character determined by the electrical conductivity (EC) over the impurity band. The activation EC in single-crystal Bi<sub>0.9</sub>Sb<sub>0.1</sub> solid solutions doped with 3% Mn is revealed to disappear and the “metallic” character of EC is observed over entire temperature range under study 5‒300 K with a peculiarity at low temperatures near 25 K reacting on external magnetic fields. It is assumed that, at high concentrations of doping with Mn atoms, a wide impurity band appears overlapping the whole forbidden band, and the observed peculiarities are related to spin fluctuations that take plays when ordering spins of magnetic Mn atoms. The mobility and the charge carrier concentration are evaluated.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"66 10","pages":"399 - 407"},"PeriodicalIF":0.9000,"publicationDate":"2024-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low-Temperature Electrical Conductivity in Mn-Doped Bi0.9Sb0.1 Solid Solutions\",\"authors\":\"A. I. Najafov, T. G. Mammadov, Kh. V. Aliguliyeva, S. Sh. Gahramanov, V. B. Aliyeva, V. N. Zverev, N. A. Abdullayev\",\"doi\":\"10.1134/S1063783424601358\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The temperature dependence of the specific electrical resistance of the semiconductor single-crystal Bi<sub>0.9</sub>Sb<sub>0.1</sub> solid solution doped with 1% Mn is shown to have, with a decrease in temperature, the activation character of the band electrical conductivity with the activation energy 10 meV that is changed at temperatures below 20 K for the “metallic” character determined by the electrical conductivity (EC) over the impurity band. The activation EC in single-crystal Bi<sub>0.9</sub>Sb<sub>0.1</sub> solid solutions doped with 3% Mn is revealed to disappear and the “metallic” character of EC is observed over entire temperature range under study 5‒300 K with a peculiarity at low temperatures near 25 K reacting on external magnetic fields. It is assumed that, at high concentrations of doping with Mn atoms, a wide impurity band appears overlapping the whole forbidden band, and the observed peculiarities are related to spin fluctuations that take plays when ordering spins of magnetic Mn atoms. The mobility and the charge carrier concentration are evaluated.</p>\",\"PeriodicalId\":731,\"journal\":{\"name\":\"Physics of the Solid State\",\"volume\":\"66 10\",\"pages\":\"399 - 407\"},\"PeriodicalIF\":0.9000,\"publicationDate\":\"2024-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physics of the Solid State\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://link.springer.com/article/10.1134/S1063783424601358\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physics of the Solid State","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1134/S1063783424601358","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Low-Temperature Electrical Conductivity in Mn-Doped Bi0.9Sb0.1 Solid Solutions
The temperature dependence of the specific electrical resistance of the semiconductor single-crystal Bi0.9Sb0.1 solid solution doped with 1% Mn is shown to have, with a decrease in temperature, the activation character of the band electrical conductivity with the activation energy 10 meV that is changed at temperatures below 20 K for the “metallic” character determined by the electrical conductivity (EC) over the impurity band. The activation EC in single-crystal Bi0.9Sb0.1 solid solutions doped with 3% Mn is revealed to disappear and the “metallic” character of EC is observed over entire temperature range under study 5‒300 K with a peculiarity at low temperatures near 25 K reacting on external magnetic fields. It is assumed that, at high concentrations of doping with Mn atoms, a wide impurity band appears overlapping the whole forbidden band, and the observed peculiarities are related to spin fluctuations that take plays when ordering spins of magnetic Mn atoms. The mobility and the charge carrier concentration are evaluated.
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Presents the latest results from Russia’s leading researchers in condensed matter physics at the Russian Academy of Sciences and other prestigious institutions. Covers all areas of solid state physics including solid state optics, solid state acoustics, electronic and vibrational spectra, phase transitions, ferroelectricity, magnetism, and superconductivity. Also presents review papers on the most important problems in solid state physics.
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