用于高性能柔性薄膜晶体管的燃烧辅助低温 ZrO2/SnO2 薄膜

IF 12.3 1区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Bongho Jang, Junil Kim, Jieun Lee, Geuntae Park, Gyuwon Yang, Jaewon Jang, Hyuk-Jun Kwon
{"title":"用于高性能柔性薄膜晶体管的燃烧辅助低温 ZrO2/SnO2 薄膜","authors":"Bongho Jang, Junil Kim, Jieun Lee, Geuntae Park, Gyuwon Yang, Jaewon Jang, Hyuk-Jun Kwon","doi":"10.1038/s41528-024-00362-8","DOIUrl":null,"url":null,"abstract":"We developed high-performance flexible oxide thin-film transistors (TFTs) using SnO2 semiconductor and high-k ZrO2 dielectric, both formed through combustion-assisted sol-gel processes. This method involves the exothermic reaction of fuels and oxidizers to produce high-quality oxide films without extensive external heating. The combustion ZrO2 films were revealed to have an amorphous structure with a higher proportion of oxygen corresponding to the oxide network, which contributes to the low leakage current and frequency-independent dielectric properties. The ZrO2/SnO2 TFTs fabricated on flexible substrates using combustion synthesis exhibited excellent electrical characteristics, including a field-effect mobility of 26.16 cm2/Vs, a subthreshold swing of 0.125 V/dec, and an on/off current ratio of 1.13 × 106 at a low operating voltage of 3 V. Furthermore, we demonstrated flexible ZrO2/SnO2 TFTs with robust mechanical stability, capable of withstanding 5000 cycles of bending tests at a bending radius of 2.5 mm, achieved by scaling down the device dimensions.","PeriodicalId":48528,"journal":{"name":"npj Flexible Electronics","volume":null,"pages":null},"PeriodicalIF":12.3000,"publicationDate":"2024-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41528-024-00362-8.pdf","citationCount":"0","resultStr":"{\"title\":\"Combustion-assisted low-temperature ZrO2/SnO2 films for high-performance flexible thin film transistors\",\"authors\":\"Bongho Jang, Junil Kim, Jieun Lee, Geuntae Park, Gyuwon Yang, Jaewon Jang, Hyuk-Jun Kwon\",\"doi\":\"10.1038/s41528-024-00362-8\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We developed high-performance flexible oxide thin-film transistors (TFTs) using SnO2 semiconductor and high-k ZrO2 dielectric, both formed through combustion-assisted sol-gel processes. This method involves the exothermic reaction of fuels and oxidizers to produce high-quality oxide films without extensive external heating. The combustion ZrO2 films were revealed to have an amorphous structure with a higher proportion of oxygen corresponding to the oxide network, which contributes to the low leakage current and frequency-independent dielectric properties. The ZrO2/SnO2 TFTs fabricated on flexible substrates using combustion synthesis exhibited excellent electrical characteristics, including a field-effect mobility of 26.16 cm2/Vs, a subthreshold swing of 0.125 V/dec, and an on/off current ratio of 1.13 × 106 at a low operating voltage of 3 V. Furthermore, we demonstrated flexible ZrO2/SnO2 TFTs with robust mechanical stability, capable of withstanding 5000 cycles of bending tests at a bending radius of 2.5 mm, achieved by scaling down the device dimensions.\",\"PeriodicalId\":48528,\"journal\":{\"name\":\"npj Flexible Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":12.3000,\"publicationDate\":\"2024-11-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.nature.com/articles/s41528-024-00362-8.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"npj Flexible Electronics\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.nature.com/articles/s41528-024-00362-8\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"npj Flexible Electronics","FirstCategoryId":"88","ListUrlMain":"https://www.nature.com/articles/s41528-024-00362-8","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

我们利用二氧化硫(SnO2)半导体和高k ZrO2电介质开发出了高性能柔性氧化物薄膜晶体管(TFT),这两种物质都是通过燃烧辅助溶胶-凝胶工艺形成的。这种方法涉及燃料和氧化剂的放热反应,无需大量外部加热即可生成高质量的氧化物薄膜。燃烧 ZrO2 薄膜具有无定形结构,氧化物网络中氧的比例较高,这有助于实现低漏电流和与频率无关的介电性能。利用燃烧合成法在柔性衬底上制造的 ZrO2/SnO2 TFT 具有出色的电气特性,包括 26.16 cm2/Vs 的场效应迁移率、0.125 V/dec 的阈下摆动和 3 V 低工作电压下 1.13 × 106 的开/关电流比。此外,我们还展示了具有强大机械稳定性的柔性 ZrO2/SnO2 TFT,它能在弯曲半径为 2.5 mm 的条件下经受住 5000 次弯曲测试,这是通过缩小器件尺寸实现的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Combustion-assisted low-temperature ZrO2/SnO2 films for high-performance flexible thin film transistors

Combustion-assisted low-temperature ZrO2/SnO2 films for high-performance flexible thin film transistors

Combustion-assisted low-temperature ZrO2/SnO2 films for high-performance flexible thin film transistors
We developed high-performance flexible oxide thin-film transistors (TFTs) using SnO2 semiconductor and high-k ZrO2 dielectric, both formed through combustion-assisted sol-gel processes. This method involves the exothermic reaction of fuels and oxidizers to produce high-quality oxide films without extensive external heating. The combustion ZrO2 films were revealed to have an amorphous structure with a higher proportion of oxygen corresponding to the oxide network, which contributes to the low leakage current and frequency-independent dielectric properties. The ZrO2/SnO2 TFTs fabricated on flexible substrates using combustion synthesis exhibited excellent electrical characteristics, including a field-effect mobility of 26.16 cm2/Vs, a subthreshold swing of 0.125 V/dec, and an on/off current ratio of 1.13 × 106 at a low operating voltage of 3 V. Furthermore, we demonstrated flexible ZrO2/SnO2 TFTs with robust mechanical stability, capable of withstanding 5000 cycles of bending tests at a bending radius of 2.5 mm, achieved by scaling down the device dimensions.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
CiteScore
17.10
自引率
4.80%
发文量
91
审稿时长
6 weeks
期刊介绍: npj Flexible Electronics is an online-only and open access journal, which publishes high-quality papers related to flexible electronic systems, including plastic electronics and emerging materials, new device design and fabrication technologies, and applications.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信