采用自驱动 P-MOS 的快速开关和短路增强型 SOI LIGBT

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2024-10-24 DOI:10.1016/j.mejo.2024.106447

Ao Wu , Weizhong Chen , Xiangwei Zeng , Zikai Wei , Haishi Wang , Zeheng Wang

{"title":"采用自驱动 P-MOS 的快速开关和短路增强型 SOI LIGBT","authors":"Ao Wu , Weizhong Chen , Xiangwei Zeng , Zikai Wei , Haishi Wang , Zeheng Wang","doi":"10.1016/j.mejo.2024.106447","DOIUrl":null,"url":null,"abstract":"<div><div>A fast-switching and short-circuit enhanced LIGBT with integrated Self-Driving P-channel MOS, named SDP-LIGBT is demonstrated by the TCAD SENTAURUS. The SDP consists of P + Emitter (Drain), N-type Carrier Store (N-CS Substrate) and P-shield (Source), and the gate of the SDP (PG) is shortly connected with the P + Emitter, thus the V<sub>PG,S</sub> equals V<sub>DS</sub>. Consequently, the SDP can be triggered on with saturate state without extra control signal. At the forward conduction, the SDP is automatically turned on with the increased V<sub>CE</sub>, then the saturation current is remarkably decreased due to division of LIGBT part and SDP part. Moreover, the N-CS substrate of the SDP acts as the hole barrier, which further decreased the on-state voltage drop (V<sub>ON</sub>). At the turn-off process, the SDP is also automatically turned on to extract excessive carriers with the increased bus voltage V<sub>CE</sub>, thus the turn-off speed and turn-off energy loss (E<sub>OFF</sub>) is effectively reduced. As a result, the SDP-LIGBT achieves superior trade-off relationship between V<sub>ON</sub> and E<sub>OFF</sub>. Furthermore, the short-circuit property of SDP-LIGBT is also significantly enhanced.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":null,"pages":null},"PeriodicalIF":1.9000,"publicationDate":"2024-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A fast-switching and short-circuit enhanced SOI LIGBT with a Self-Driving P-MOS\",\"authors\":\"Ao Wu , Weizhong Chen , Xiangwei Zeng , Zikai Wei , Haishi Wang , Zeheng Wang\",\"doi\":\"10.1016/j.mejo.2024.106447\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>A fast-switching and short-circuit enhanced LIGBT with integrated Self-Driving P-channel MOS, named SDP-LIGBT is demonstrated by the TCAD SENTAURUS. The SDP consists of P + Emitter (Drain), N-type Carrier Store (N-CS Substrate) and P-shield (Source), and the gate of the SDP (PG) is shortly connected with the P + Emitter, thus the V<sub>PG,S</sub> equals V<sub>DS</sub>. Consequently, the SDP can be triggered on with saturate state without extra control signal. At the forward conduction, the SDP is automatically turned on with the increased V<sub>CE</sub>, then the saturation current is remarkably decreased due to division of LIGBT part and SDP part. Moreover, the N-CS substrate of the SDP acts as the hole barrier, which further decreased the on-state voltage drop (V<sub>ON</sub>). At the turn-off process, the SDP is also automatically turned on to extract excessive carriers with the increased bus voltage V<sub>CE</sub>, thus the turn-off speed and turn-off energy loss (E<sub>OFF</sub>) is effectively reduced. As a result, the SDP-LIGBT achieves superior trade-off relationship between V<sub>ON</sub> and E<sub>OFF</sub>. Furthermore, the short-circuit property of SDP-LIGBT is also significantly enhanced.</div></div>\",\"PeriodicalId\":49818,\"journal\":{\"name\":\"Microelectronics Journal\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2024-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronics Journal\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1879239124001516\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1879239124001516","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

TCAD SENTAURUS 演示了一种具有集成自驱动 P 沟道 MOS 的快速开关和短路增强型 LIGBT，命名为 SDP-LIGBT。SDP 由 P + 发射极（漏极）、N 型载流子存储器（N-CS 基底面）和 P 屏蔽层（源极）组成，SDP 的栅极（PG）与 P + 发射极短时间连接，因此 VPG,S 等于 VDS。因此，SDP 可以在饱和状态下触发，而无需额外的控制信号。在正向传导时，SDP 会随着 VCE 的增加而自动开启，然后由于 LIGBT 部分和 SDP 部分的分割，饱和电流会显著降低。此外，SDP 的 N-CS 衬底起到了空穴势垒的作用，从而进一步降低了导通压降（VON）。在关断过程中，随着总线电压 VCE 的升高，SDP 也会自动开启以提取过多的载流子，从而有效降低了关断速度和关断能量损耗（EOFF）。因此，SDP-LIGBT 在 VON 和 EOFF 之间实现了出色的权衡关系。此外，SDP-LIGBT 的短路特性也显著增强。

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A fast-switching and short-circuit enhanced SOI LIGBT with a Self-Driving P-MOS

A fast-switching and short-circuit enhanced LIGBT with integrated Self-Driving P-channel MOS, named SDP-LIGBT is demonstrated by the TCAD SENTAURUS. The SDP consists of P + Emitter (Drain), N-type Carrier Store (N-CS Substrate) and P-shield (Source), and the gate of the SDP (PG) is shortly connected with the P + Emitter, thus the V_PG,S equals V_DS. Consequently, the SDP can be triggered on with saturate state without extra control signal. At the forward conduction, the SDP is automatically turned on with the increased V_CE, then the saturation current is remarkably decreased due to division of LIGBT part and SDP part. Moreover, the N-CS substrate of the SDP acts as the hole barrier, which further decreased the on-state voltage drop (V_ON). At the turn-off process, the SDP is also automatically turned on to extract excessive carriers with the increased bus voltage V_CE, thus the turn-off speed and turn-off energy loss (E_OFF) is effectively reduced. As a result, the SDP-LIGBT achieves superior trade-off relationship between V_ON and E_OFF. Furthermore, the short-circuit property of SDP-LIGBT is also significantly enhanced.

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.