Donglin Zhang , Yuan Zhang , Jiaqi Song , Shuang Zhao , Tao Xu , Xin Tian , Xiuchen Zhao , Yongjun Huo
{"title":"在多晶 Si3N4 衬底上溅射 (111) 高取向纳米细化银,用于大功率电子封装","authors":"Donglin Zhang , Yuan Zhang , Jiaqi Song , Shuang Zhao , Tao Xu , Xin Tian , Xiuchen Zhao , Yongjun Huo","doi":"10.1016/j.surfin.2024.105329","DOIUrl":null,"url":null,"abstract":"<div><div>Nanotwinned silver (NT-Ag) exhibits excellent mechanical and electrical properties, attributed to its high-density and (111) highly-oriented twinning structure in nanoscale. Therefore, it has recently drawn much attention in the field of electronic packaging, where it can be utilized as interconnection or metallization materials. However, it has been a critical challenge to fabricate the high-density and highly-oriented NT-Ag onto polycrystalline ceramic substrates, whose crystal structure does not support the epitaxial growth of NT-Ag films. In the current work, a high-density and highly-oriented NT-Ag film has been fabricated onto a polycrystalline ceramic substrate, i.e., NT-Ag on silicon nitride (NT-Ag@Si<sub>3</sub>N<sub>4</sub>), using the magnetron sputtering method. As results, a close-packed arrangement of high-density NT-Ag has been observed within columnar grains aligned along its growth direction, whereas the nanoindentation hardness of the NT-Ag film reached 1.82 GPa, with an electrical resistivity of 2.06 μΩ‧cm. Moreover, this study has discussed and explained the growth kinetics and mechanism of NT-Ag films, by controlling magnetron sputtering process parameters, such as sputtering power and argon flow rate. Additionally, the differences in the growth mechanism of NT-Ag on (100) Si and polycrystalline Si<sub>3</sub>N<sub>4</sub> have also been investigated. With its superior material properties, NT-Ag@Si<sub>3</sub>N<sub>4</sub> holds great promise in the applications of advanced packaging technology for high-power electronics.</div></div>","PeriodicalId":22081,"journal":{"name":"Surfaces and Interfaces","volume":"55 ","pages":"Article 105329"},"PeriodicalIF":5.7000,"publicationDate":"2024-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Sputtering of (111) highly-oriented nanotwinned Ag on polycrystalline Si3N4 substrates for high-power electronic packaging\",\"authors\":\"Donglin Zhang , Yuan Zhang , Jiaqi Song , Shuang Zhao , Tao Xu , Xin Tian , Xiuchen Zhao , Yongjun Huo\",\"doi\":\"10.1016/j.surfin.2024.105329\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Nanotwinned silver (NT-Ag) exhibits excellent mechanical and electrical properties, attributed to its high-density and (111) highly-oriented twinning structure in nanoscale. Therefore, it has recently drawn much attention in the field of electronic packaging, where it can be utilized as interconnection or metallization materials. However, it has been a critical challenge to fabricate the high-density and highly-oriented NT-Ag onto polycrystalline ceramic substrates, whose crystal structure does not support the epitaxial growth of NT-Ag films. In the current work, a high-density and highly-oriented NT-Ag film has been fabricated onto a polycrystalline ceramic substrate, i.e., NT-Ag on silicon nitride (NT-Ag@Si<sub>3</sub>N<sub>4</sub>), using the magnetron sputtering method. As results, a close-packed arrangement of high-density NT-Ag has been observed within columnar grains aligned along its growth direction, whereas the nanoindentation hardness of the NT-Ag film reached 1.82 GPa, with an electrical resistivity of 2.06 μΩ‧cm. Moreover, this study has discussed and explained the growth kinetics and mechanism of NT-Ag films, by controlling magnetron sputtering process parameters, such as sputtering power and argon flow rate. Additionally, the differences in the growth mechanism of NT-Ag on (100) Si and polycrystalline Si<sub>3</sub>N<sub>4</sub> have also been investigated. With its superior material properties, NT-Ag@Si<sub>3</sub>N<sub>4</sub> holds great promise in the applications of advanced packaging technology for high-power electronics.</div></div>\",\"PeriodicalId\":22081,\"journal\":{\"name\":\"Surfaces and Interfaces\",\"volume\":\"55 \",\"pages\":\"Article 105329\"},\"PeriodicalIF\":5.7000,\"publicationDate\":\"2024-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Surfaces and Interfaces\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2468023024014858\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Surfaces and Interfaces","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2468023024014858","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
Sputtering of (111) highly-oriented nanotwinned Ag on polycrystalline Si3N4 substrates for high-power electronic packaging
Nanotwinned silver (NT-Ag) exhibits excellent mechanical and electrical properties, attributed to its high-density and (111) highly-oriented twinning structure in nanoscale. Therefore, it has recently drawn much attention in the field of electronic packaging, where it can be utilized as interconnection or metallization materials. However, it has been a critical challenge to fabricate the high-density and highly-oriented NT-Ag onto polycrystalline ceramic substrates, whose crystal structure does not support the epitaxial growth of NT-Ag films. In the current work, a high-density and highly-oriented NT-Ag film has been fabricated onto a polycrystalline ceramic substrate, i.e., NT-Ag on silicon nitride (NT-Ag@Si3N4), using the magnetron sputtering method. As results, a close-packed arrangement of high-density NT-Ag has been observed within columnar grains aligned along its growth direction, whereas the nanoindentation hardness of the NT-Ag film reached 1.82 GPa, with an electrical resistivity of 2.06 μΩ‧cm. Moreover, this study has discussed and explained the growth kinetics and mechanism of NT-Ag films, by controlling magnetron sputtering process parameters, such as sputtering power and argon flow rate. Additionally, the differences in the growth mechanism of NT-Ag on (100) Si and polycrystalline Si3N4 have also been investigated. With its superior material properties, NT-Ag@Si3N4 holds great promise in the applications of advanced packaging technology for high-power electronics.
期刊介绍:
The aim of the journal is to provide a respectful outlet for ''sound science'' papers in all research areas on surfaces and interfaces. We define sound science papers as papers that describe new and well-executed research, but that do not necessarily provide brand new insights or are merely a description of research results.
Surfaces and Interfaces publishes research papers in all fields of surface science which may not always find the right home on first submission to our Elsevier sister journals (Applied Surface, Surface and Coatings Technology, Thin Solid Films)