通过离子束辅助沉积纹理工程将锰镍反铁磁体的高热稳定性与高性能氧化镁-TMR 传感器相结合

IF 2.2 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Sensors Letters Pub Date : 2024-10-16 DOI:10.1109/LSENS.2024.3482120

Pedro D. R. Araujo;Rita Macedo;Marta Pereira;Tiago P. Fernandes;Susana Cardoso

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引用次数: 0

摘要

目前，人们正在追求具有更强热弹性的隧道磁阻（TMR）传感器，以适应恶劣的环境应用。在这封信中，我们探讨了锰镍作为 TMR 传感器多层中交换偏压的可能候选材料。我们使用离子束辅助沉积来生长锰镍层。与离子束沉积的对应层相比，锰/铁氧体双层膜中的交换偏置场明显增加，达到 110 mT。此外，我们还首次在文献中证明了与由合成反铁磁体和氧化镁隧道势垒组成的先进传感器多层膜的兼容性。优化后的器件在常温下的隧穿磁阻比为 130$/%$，在 300 $^\circ$C 下的隧穿磁阻比为 30$/%$，相应的灵敏度分别为 17.0 和 9.5$/%$/mT，在全温操作窗口中具有明确的平行/反平行高原。

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Combining High Thermal Stability of MnNi Antiferromagnets With High-Performance MgO-TMR Sensors Through Texture Engineering With Ion Beam Assisted Deposition

Tunneling magnetoresistive (TMR) sensors with enhanced thermal resilience are being pursued for harsh environment applications. In this letter, we explore MnNi as a possible candidate for exchange bias in TMR sensor multilayers. We use ion beam assisted deposition for MnNi layer growth. A significant emergence of exchange bias field of

$\mu _{0}H_{\text{ex}} =$

110 mT was obtained in MnNi/CoFe bilayers against the ion beam deposited counterpart. In addition, we demonstrate for the first time in literature the compatibility with state-of-the-art sensor multilayers comprising synthetic antiferromagnets and MgO tunnel barriers. The optimized device shows a tunneling magnetoresistance ratio of 130

$\%$

at RT and a 30

$\%$

at 300

$^\circ$

C corresponding to sensitivities of 17.0 and 9.5

$\%$

/mT with well-defined parallel/antiparallel plateaus in the full-temperature operation window.

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