Amplifying energy storage and production efficiency: Utilizing BaS3: Ni2S3: Sb2S3 synthesized from dithiocarbamate precursors for enhanced and sustainable energy solutions

During this period of increasing energy use, the scientific community and energy stakeholders have been closely monitoring electrochemical energy storage. In an attempt to enhance the functionality of charge storage devices, diethyldithiocarbamate ligand is employed as a chelating agent during the production of the novel BaS₃: Ni₂S₃: Sb₂S₃. The semiconductor BaS₃: Ni₂S₃: Sb₂S₃, which was made in an environmentally friendly manner, showed good photoactivity due to its 2.97 eV energy band gap and light absorption. The resultant chalcogenide had an average crystallite size of 19.69 nm and displayed outstanding crystallinity with mixed crystallographic phases. Furthermore, infrared spectroscopy was used to investigate metallic sulfide connections, and the findings indicated that they varied between 500 and 875 cm⁻¹. This chalcogenide featured varied sites for electrochemical reactions due to its morphology. The electrochemical performance of BaS₃: Ni₂S₃: Sb₂S₃ was assessed using a conventional three-electrode setup. With a specific capacitance of up to 1019.4 F g⁻¹ and a power density of 11931.26 W kg⁻¹, BaS₃: Ni₂S₃: Sb₂S₃ has proven to be an excellent electrode material for energy storage. This remarkable electrochemical performance was further reinforced by the comparable series resistance (R_s) of 0.57 Ω. During electrocatalysis, the electrode produced an OER overpotential with a Tafel slope of 348 mV and 119 mV dec⁻¹. In contrast, the overpotential and Tafel slope in terms of the HER activity and were 211 mV and 100 mV/dec, respectively.