Minimum Energy Atomic Deposition: A novel, efficient atomistic simulation method for thin film growth

Thin-film growth is an area of research concerned with complex phenomena happening at atomic scales. Therefore, molecular simulation has been an important tool to confront experimental results to theoretical assumptions. However, the traditional thin film growth simulation methods, i.e., Molecular Dynamics (MD) and kinetic Monte-Carlo (kMC) and combinations thereof, suffer from limitations inherent to their design, i.e., limitations in system size and simulation time for MD and predetermined reaction rates and reaction sites for kMC. Consequently, it is practically impossible to simulate the evolution of polycrystalline growth resulting in $\sim$100 nm thick films with realistic stress fields and defect structures, such as grain boundaries, stacking faults, etc. In this work, we propose a versatile and efficient atomistic simulation method (Minimum Energy Atomic Deposition) which works by direct insertion of atoms at points of minimal potential energy through efficient scanning of candidate positions and rapid relaxation of the system. This method allows simulating $\ge$100 nm film thickness while mimicking experimental growth rates and high crystallinity and low-defect concentration and enables in-depth studies of atomic growth mechanisms, the evolution of crystal defects, and residual stress build-up. We demonstrate the efficiency and versatility of the method through the deposition of Al on Si, Al on Al, and Si on Si. The simulation results are systematically compared with experimental observations of thin-film deposition, yielding consistent observations. The method has been implemented in open-source LAMMPS software, making it easily accessible to the research community.