锥模 Czochralski 法生长的 CaSrF2 晶体的紫外光学特性

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2024-10-19 DOI:10.1016/j.jcrysgro.2024.127949

Yugo Akabe , Kotaro Enomoto , Keito Shinohara , Marilou Raduban , Toshihiko Shimizu , Nobuhiko Sarukura , Rui Okumura , Ryosuke Kodama , Kazuya Takahashi , Toru Kawamata , Kazumasa Sugiyama , Tsuguo Fukuda

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引用次数: 0

摘要

具有极宽带隙的氟化物晶体是紫外线波长范围内的理想光学材料。利用带有锥形模具（CD-CZ）的 Czochralski 方法，生长出了直径为 4 英寸的大型氟化钙锶（Ca0.582Sr0.418F2）单晶体。晶体的折射率和相对透射率是通过将其切割成三角棱镜并抛光来评估的。直接测量折射率和相对透射率的方法是使用分光仪对光线通过双棱镜装置时的折射情况进行成像，双棱镜装置包括作为参照物的 SQ 棱镜和作为评估材料的 CaF2 或 Ca0.582Sr0.418F2。表征结果表明，Ca0.582Sr0.418F2 在紫外区具有出色的折射率色散和透射率，这证实了双棱镜和光谱仪装置适用于测量紫外区的折射率和相对透射率。

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Ultraviolet optical properties of CaSrF2 crystal grown by the cone die Czochralski method

Fluoride crystals with extremely wide band gaps are ideal optical materials in the UV wavelength range. Large 4-inch diameter calcium strontium fluoride (Ca_0.582Sr_0.418F₂) single crystal was grown using the Czochralski method with a Cone-shape Die (CD-CZ). The refractive index and relative transmittance of the crystal was evaluated by cutting it into a triangular prism and polished. The direct measurement of the refractive index and relative transmittance was done by using a spectrograph to image the refraction of light as it passes through a dual prism set-up consisting of a SQ prism as reference and either CaF₂ or Ca_0.582Sr_0.418F₂ as the material under evaluation. Characterization results showed that Ca_0.582Sr_0.418F₂ has excellent refractive index dispersion and transmittance in the UV region, confirming the applicability of the dual prism with spectrograph setup to measurements of the refractive index and relative transmittance in the UV region.

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.