通过离子辐照 a-Ge/Au 双层体系并对 Ge 进行化学蚀刻，在室温下开发出纳米多孔金薄膜

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2024-10-16 DOI:10.1016/j.jcrysgro.2024.127951

G. Maity , Geetika Patel , S. Ojha , S. Dubey , Shiv P. Patel , D. Kanjilal

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引用次数: 0

摘要

本文详细介绍了通过室温离子辐照开发纳米多孔金（NPG）的过程。100 MeV Ni 离子在室温下以 5 × 1013 离子 cm-2 的通量对 a-Ge/c-Au 双层薄膜进行了辐照。将 Ge/Au 薄膜浸入 10% H2O2 溶液中，选择性地蚀刻掉金基体上的 Ge，从而获得 NPG。通过 TRIM 模拟和 RBS 光谱证实了在辐照下 Ge 和 Au 在界面上的扩散。SEM 图像和 EDX 光谱证实了高纯度 NPG 的形成。此外，原子力显微镜图像的统计和分形分析也证实了 NPG 的形成。据观察，NPG 系统显示出非常好的光学特性（低反射率和高透射率）。用这种方法制备的高质量 NPG 可用于光学传感器、透明导电电极、抗反射涂层和光电探测器技术等领域。

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Development of nano-porous Au thin film at room temperature via ion irradiation in a-Ge/Au bilayer system followed by chemical etching of Ge

The development of nano-porous gold (NPG) via room temperature ion irradiation has been presented in detail. The bilayer thin films of a-Ge/c-Au have been irradiated by 100 MeV Ni ions with the fluence of 5 × 10¹³ ions cm⁻² at room temperature. NPG is obtained by selectively etching Ge off from the Au matrix by dipping the Ge/Au thin film into 10 % H₂O₂ solution. Diffusion of Ge and Au across the interface under irradiation was confirmed by TRIM simulation and RBS spectra. The SEM image and EDX spectra confirms the formation of NPG with high purity. In addition, the statistical and fractal analysis of AFM image also confirms the formation of NPG. NPG system has been observed to show very good optical properties (low reflectance and high transmittance). The high quality NPG prepared by this method can be useful in the fields like optical sensors, transparent conductive electrodes, anti-reflective coatings, and photo-detector technology.

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.