用于崮型短波红外砷化镓光电探测器的有源表面钝化技术

IF 3.1 3区 物理与天体物理 Q2 INSTRUMENTS & INSTRUMENTATION
Necati Işık , Serdar Kocaman
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引用次数: 0

摘要

我们提出了一种用于介子型红外光子探测器的栅极控制器件结构,它可以改善表面条件。通过金属氧化物半导体(MOS)结构施加恒定的电场,在 pn 结上添加的附加终端可操控表面电荷。对截止波长为 1.69 μm 的短波红外(SWIR)砷化镓铟(InGaAs)样品进行了表征。为门控机制提供了一个理论框架。实验结果表明,通过中断表面沟道的形成,暗电流的分流分量提高了 63%。在 50 V/μm 的表面-栅极偏压下,有效的 GR 寿命为 20 μs。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Active Surface Passivation for mesa type short-wave infrared InGaAs Photodetectors
We propose a gate-controlled device structure for mesa-type infrared photon detectors with the means of improving surface conditions. Additional terminal added to the pn-junction allows surface charges to be manipulated by applying a constant E-field through a metal–oxide–semiconductor (MOS) structure. Short-wave infrared (SWIR) Indium Gallium Arsenide (InGaAs) sample with a cut-off wavelength of 1.69 μm is characterized. A theoretical framework is provided to gating mechanism. Experimental results show that, the shunt component of the dark current improved as high as 63% by interrupting the channel formation on the surface. Further improvements in the generation–recombination (GR) current is noted at more than 90% at 300 K. The effective GR lifetime of 20 μs is obtained under 50 V/μm surface-gate bias.
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来源期刊
CiteScore
5.70
自引率
12.10%
发文量
400
审稿时长
67 days
期刊介绍: The Journal covers the entire field of infrared physics and technology: theory, experiment, application, devices and instrumentation. Infrared'' is defined as covering the near, mid and far infrared (terahertz) regions from 0.75um (750nm) to 1mm (300GHz.) Submissions in the 300GHz to 100GHz region may be accepted at the editors discretion if their content is relevant to shorter wavelengths. Submissions must be primarily concerned with and directly relevant to this spectral region. Its core topics can be summarized as the generation, propagation and detection, of infrared radiation; the associated optics, materials and devices; and its use in all fields of science, industry, engineering and medicine. Infrared techniques occur in many different fields, notably spectroscopy and interferometry; material characterization and processing; atmospheric physics, astronomy and space research. Scientific aspects include lasers, quantum optics, quantum electronics, image processing and semiconductor physics. Some important applications are medical diagnostics and treatment, industrial inspection and environmental monitoring.
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