具有高阈值电压和更佳动态性能的鳍式栅 p-GaN HEMT

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2024-10-19 DOI:10.1016/j.mejo.2024.106442

Lingyan Shen , Xuetong Zhou , Li Zheng , Xinhong Cheng

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引用次数: 0

摘要

为了同时提高 p-GaN HEMT 的阈值电压（Vth）和动态性能，我们提出了一种新型鳍栅 p-GaN (FPG) HEMT。鳍栅结构通过在侧壁上形成肖特基型触点和在鳍顶部形成源极连接的欧姆型触点，在栅极和源极之间形成常开 p 沟道 MESFET。因此，Vth 可以随 p 沟道 MESFET 的关断电压而变化，而关断电压可以通过鳍片-p-氮化镓的掺杂浓度和宽度来调节。通过优化鳍片结构，本研究实现了 4V 的高正向 Vth，且没有出现跨导和击穿电压衰减。它打破了传统 p-GaN HEMT Vth 与导通电阻之间的限制。通过 SPICE 仿真研究了 FPG HEMT 的动态特性。由于通过常导通 MESFET 实现了良好接地的 p-GaN，因此导通/关断应力后 Vth 动态偏移（ΔVth）的恢复过程可加快两个数量级。这意味着 FPG HEMT 具有不易察觉的动态衰减和巨大的高频应用潜力。

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A fin-gate p-GaN HEMT with high threshold voltage and improved dynamic performance

A novel fin-gate p-GaN (FPG) HEMT is proposed to simultaneously increase threshold voltage (V_th) and improve dynamic performance of the p-GaN HEMT. The fin-gate structure works as a normally-on p-channel MESFET between gate and source by forming a Schottky-type contact on sidewall and a source-connected Ohmic-type contact on top of the fin. Thus, the V_th can change with the shutdown voltage of the p-channel MESFET, which can be modulated by the doping concentration and width of the fin-p-GaN. By optimizing the fin structure, a high positive V_th of 4V is achieved without transconductance and breakdown voltage degradation in this work. It breaks the restriction between V_th and on-resistance for conventional p-GaN HEMT. The dynamic characteristics of the FPG HEMT are investigated by SPICE simulations. Owing to the well-grounded p-GaN through the normally-on MESFET, the recovery process of the dynamic shift in V_th (ΔV_th) after on/off-state stress can be accelerated by two orders of magnitude. It means an imperceptible dynamic degradation and a great potential in high frequency application for the FPG HEMT.

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.