以复合氢氧化物为介质合成用于储能的掺钡氧化锶纳米结构

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Muhammad Arshad Kamran, Muhammad Usama, Sami Ullah
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引用次数: 0

摘要

氧化锶纳米结构(SrO NSs)因其较高的比能量、可调整的材料特性和快速的可逆反应而受到科学家们的广泛关注。然而,低导电性和较差的周期稳定性阻碍了它们在储能设备中的应用,尤其是在超级电容器中。由于掺杂是提高电化学储能设备电极性能的有效方法。因此,在本研究中,我们采用复合氢氧化物介导的方法合成了掺钡的氧化锶纳米结构(掺钡 SrO NSs)。在电流密度为 1 A/g 时,纯 SrO NSs 的比电容为 178 F/g。在氧化锶中掺入钡可显著提高存储容量。当电流密度为 1 A/g 时,4% 钡-SrO NSs 的比电容为 826 F/g,能量密度为 28.68 Wh/Kg,功率密度为 250 W/Kg。与传统材料相比,掺杂钡的 SrO NSs 具有更高的电化学稳定性、更强的速率能力和更低的阻抗。掺杂钡产生的额外电活性位点和额外电子是这些改进的关键。这项研究强调了掺杂钡的 SrO NSs 在高性能储能方面的潜力,在电化学性能和稳定性方面取得了显著进步。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Composite hydroxide mediated synthesis of barium-doped strontium oxide nanostructures for energy storage applications

Strontium oxide nanostructures (SrO NSs) have garnered intensive research captivation among scientists owing to their higher specific energy, tunable material properties, and quick reversible reactions. However, low conductivity and poor cyclical stability hinder their use in energy storage devices, especially in supercapacitors. Since doping is an effective way to enhance the performance of electrodes for electrochemical energy storage devices. Therefore, in this study, we report the synthesis of Barium-doped Strontium Oxide nanostructures (Ba-doped SrO NSs) using a composite hydroxide-mediated approach. Pure SrO NSs delivered the specific capacitance of 178 F/g at the current density of 1 A/g. The doping of Ba into SrO drastically improves the storage capacity. The 4% Ba-SrO NSs delivered the specific capacitance of 826 F/g at the current density of 1 A/g along with a high-power density of 250 W/Kg at an energy density of 28.68 Wh/Kg. Compared to conventional materials, Ba-doped SrO NSs demonstrated improved electrochemical stability, enhanced rate capability, and reduced impedance. The additional electroactive sites and extra electrons from Ba doping are key to these improvements. This study underscores the potential of Ba-doped SrO NSs for high-performance energy storage, offering significant advancements in electrochemical performance and stability.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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