电流应力下剪切循环 Cu/Sn-3.0Ag-0.5Cu/Cu 接头的寿命预测和断裂行为

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Wangyun Li, Longgen Liu, Feng Chen, Yiqin Xu, Hongbo Qin, Yubing Gong
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引用次数: 0

摘要

研究了剪切幅度和接头高度对电流密度增加时 Cu/Sn-3.0Ag-0.5Cu/Cu 接头的疲劳寿命和断裂行为的影响。结果表明,疲劳寿命随剪切幅度和电流密度的增加而缩短,但与接头高度无关。提出了一个考虑电流应力的疲劳寿命预测模型,预测值与实验结果接近。此外,当电流密度增加时,断裂最初发生在韧性模式的焊料基体上,然后转移到韧性-脆性混合模式的焊料/IMC 层界面上的部分断裂,最后转移到脆性模式的焊料/IMC 层界面上的完全断裂,显示出明显的韧性-脆性过渡。这些变化主要是由于界面处的应变失配急剧加剧所致。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Lifetime prediction and fracture behavior of shear cycled Cu/Sn–3.0Ag–0.5Cu/Cu joints under current stressing

Lifetime prediction and fracture behavior of shear cycled Cu/Sn–3.0Ag–0.5Cu/Cu joints under current stressing

Influences of shear amplitude and joint height on fatigue lifetime and fracture behavior of Cu/Sn–3.0Ag–0.5Cu/Cu joints with increasing current density were investigated. The results show that fatigue lifetime was shortened with increasing shear amplitude and current density but presented no joint height-dependency. A fatigue lifetime prediction model considering electric current stressing was proposed, and the predicted values were close to the experiment results. Additionally, when the current density increased, the fracture initially occurred in the solder matrix with a ductile mode, then shifted to partial at the solder/IMC layer interface with a ductile–brittle mixed mode, and finally migrated to complete at the solder/IMC layer interface with a brittle mode, showing a prominent ductile-to-brittle transition. These changes were mainly due to the sharply aggravated strain mismatch at the interface.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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