{"title":"通过掺杂 BaSnO3 增强 Bi4Ti3O12 基介电陶瓷的储能特性","authors":"Yunkai Zhao, Kai Wang, Lingru Meng, Yunong Liao, Weiqi Zhang, Zhijun Xu, Jinyi Wu, Ruiqing Chu","doi":"10.1007/s10854-024-13684-0","DOIUrl":null,"url":null,"abstract":"<div><p>In this work, (1 − <i>x</i>) Bi<sub>2.8</sub>La<sub>1.2</sub>Ti<sub>3</sub>O<sub>12−</sub><i>x</i>BaSnO<sub>3</sub> (<i>x</i> = 0.04–0.07, denoted as (1 − <i>x</i>)BLT–<i>x</i>BSN) ceramics were prepared using traditional solid-phase sintering technology at 1150 °C for 2 h. The introduction of BSN into BLT ceramics not only refines the grain, but also increases the Curie temperature (<i>T</i><sub>c</sub>), in addition to enhancing the dielectric temperature stability. In 0.95BLT–0.05BSN lead-free ceramics, the breakdown field strength reaches 210 kV/cm, and a recoverable energy storage density (<i>W</i><sub>rec</sub>) of 0.73 J/cm<sup>3</sup> and an energy storage efficiency (<i>η</i>) of 86.7% are obtained. Furthermore, the 0.95 BLT–0.05 BSN ceramics showed good fatigue properties, with a 3.8% <i>W</i><sub>rec</sub> change over 10<sup>6</sup> cycles at 20 °C, and, in particular, only a 3.6% W<sub>rec</sub> change over 10<sup>6</sup> cycles at 50 °C, demonstrating insensitivity to temperature changes. In addition, the reduction in ferroelectric polarization is attributed to the significant orbital hybridization between Bi/Ti and O atoms, along with the disorder in A/B site ionic displacements, as inferred from first-principles calculations.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhancing energy storage properties of Bi4Ti3O12-based dielectric ceramics via doping BaSnO3\",\"authors\":\"Yunkai Zhao, Kai Wang, Lingru Meng, Yunong Liao, Weiqi Zhang, Zhijun Xu, Jinyi Wu, Ruiqing Chu\",\"doi\":\"10.1007/s10854-024-13684-0\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this work, (1 − <i>x</i>) Bi<sub>2.8</sub>La<sub>1.2</sub>Ti<sub>3</sub>O<sub>12−</sub><i>x</i>BaSnO<sub>3</sub> (<i>x</i> = 0.04–0.07, denoted as (1 − <i>x</i>)BLT–<i>x</i>BSN) ceramics were prepared using traditional solid-phase sintering technology at 1150 °C for 2 h. The introduction of BSN into BLT ceramics not only refines the grain, but also increases the Curie temperature (<i>T</i><sub>c</sub>), in addition to enhancing the dielectric temperature stability. In 0.95BLT–0.05BSN lead-free ceramics, the breakdown field strength reaches 210 kV/cm, and a recoverable energy storage density (<i>W</i><sub>rec</sub>) of 0.73 J/cm<sup>3</sup> and an energy storage efficiency (<i>η</i>) of 86.7% are obtained. Furthermore, the 0.95 BLT–0.05 BSN ceramics showed good fatigue properties, with a 3.8% <i>W</i><sub>rec</sub> change over 10<sup>6</sup> cycles at 20 °C, and, in particular, only a 3.6% W<sub>rec</sub> change over 10<sup>6</sup> cycles at 50 °C, demonstrating insensitivity to temperature changes. In addition, the reduction in ferroelectric polarization is attributed to the significant orbital hybridization between Bi/Ti and O atoms, along with the disorder in A/B site ionic displacements, as inferred from first-principles calculations.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-10-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-13684-0\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13684-0","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Enhancing energy storage properties of Bi4Ti3O12-based dielectric ceramics via doping BaSnO3
In this work, (1 − x) Bi2.8La1.2Ti3O12−xBaSnO3 (x = 0.04–0.07, denoted as (1 − x)BLT–xBSN) ceramics were prepared using traditional solid-phase sintering technology at 1150 °C for 2 h. The introduction of BSN into BLT ceramics not only refines the grain, but also increases the Curie temperature (Tc), in addition to enhancing the dielectric temperature stability. In 0.95BLT–0.05BSN lead-free ceramics, the breakdown field strength reaches 210 kV/cm, and a recoverable energy storage density (Wrec) of 0.73 J/cm3 and an energy storage efficiency (η) of 86.7% are obtained. Furthermore, the 0.95 BLT–0.05 BSN ceramics showed good fatigue properties, with a 3.8% Wrec change over 106 cycles at 20 °C, and, in particular, only a 3.6% Wrec change over 106 cycles at 50 °C, demonstrating insensitivity to temperature changes. In addition, the reduction in ferroelectric polarization is attributed to the significant orbital hybridization between Bi/Ti and O atoms, along with the disorder in A/B site ionic displacements, as inferred from first-principles calculations.
期刊介绍：
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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