用于水氨传感的 Sm 掺杂 SnO2 纳米结构

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Nishu Rani, Vijay Kumar, Sunil Kumar, Sandeep Yadav, Sridhar Babu
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引用次数: 0

摘要

本文报道了利用共沉淀路线合成掺杂 Sm 的氧化锡纳米结构,以开发一种水氨传感器。分别通过 XRD、FESEM、FTIR、紫外可见吸收光谱和能量分辨光致发光对制备的样品进行了表征。晶体尺寸范围为 8 ± 0.4 nm 至 17 ± 1 nm。所有样品都呈现近似球形的形态,晶粒尺寸范围为 35-70 nm。傅立叶变换红外光谱与 O-H、C=O、Sn-OH 和 Sn-O-Sn 官能团相对应,证实了 SnO2 纳米结构的形成。能带隙从 2.71 eV 到 3.09 eV 不等。在掺杂 9at% Sm 的 SnO2 纳米结构中观察到的带隙增大可能是由于 Moss-Burstein 效应。光致发光研究表明,随着掺杂剂的加入和掺杂剂浓度的增加,带间发射和缺陷相关发射都有所增加。对未掺杂和掺杂 Sm 的氧化锡纳米结构进行了线性扫频伏安法研究,以开发一种水性氨传感器。I-V 特性表明,未掺杂和掺杂 Sm 的二氧化锡纳米结构层在浸入含氨水中时电流会上升。样品的分析物检测能力也随着掺杂Sm的增加(3%到9%)以及水中分析物(NH3)浓度的增加(100 ppm到500 ppm)而提高。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Sm-doped SnO2 nanostructures for aqueous ammonia sensing application

This paper reports the synthesis of Sm-doped tin oxide nanostructures using a co-precipitation route to develop an aqueous ammonia sensor. The characterization of as-prepared samples was carried out by XRD, FESEM, FTIR, UV–Visible absorption spectroscopy, and energy-resolved photoluminescence, respectively. The crystallite size range is from 8 ± 0.4 nm to 17 ± 1 nm. All samples show nearly spherical morphology with a grain size range of 35–70 nm. FTIR spectra correspond to O–H, C=O, Sn-OH, and Sn–O–Sn functional groups, confirming the formation of SnO2 nanostructures. The energy band gap varies from 2.71 eV to 3.09 eV. An increase in bandgap observed for 9at% Sm-doped SnO2 nanostructures may be due to the Moss-Burstein effect. Photoluminescence studies show the increase in band-to-band and defect-related emission with the addition of a dopant and an increase in dopant concentration. Linear sweep Voltammetry of undoped and Sm-doped tin oxide nanostructures was done to develop an aqueous ammonia sensor. I-V characteristics show a rise in current for undoped and Sm-doped SnO2 nanostructured layers when immersed in water containing ammonia. The analyte detection capability of the samples also increases with an increase in Sm-dopant (3% to 9%) as well as with analyte (NH3) concentration (100 ppm to 500 ppm) in water.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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