{"title":"利用低温离子束辅助沉积技术制备 Mn-Co-Fe-Zn-O NTC 薄膜并增强其电气稳定性","authors":"Yibo He, Yuxian Song, Xinmiao Wang, Xijun Yan, Shusheng Pan, Wenwen Kong","doi":"10.1007/s10854-024-13760-5","DOIUrl":null,"url":null,"abstract":"<div><p>The Mn–Co–Fe–Zn–O negative temperature coefficient (NTC) thin films, vital for next-gen temperature sensors, face a pivotal hurdle in enhancing electrical stability. This study triumphantly crafted these films with ultra-high stability using ion-beam-assisted deposition (IBAD) at a relatively low temperature (240 °C). All films obtained under three different ion-beam types, Ar, O<sub>2</sub>, and None, exhibit a dense, grain homogeneous morphology as well as a single spinel phase structure, and all show excellent NTC characteristics over the temperature range of 10–90 °C. The XRD peak shift and Raman signal attenuation indicate that ion-beam bombardment exerts control over the crystal structure. The application of Ar ion-beam assistance resulted in a significant reduction in film ageing drift, from 4.23% to 0.58%. This reduction was achieved by the Jahn–Teller distortions induced by the high concentration of Mn<sup>3+</sup>, and the low oxygen vacancy concentration. Further, the low processing temperature augments process compatibility with heat-sensitive substrates, safeguarding them from harm and hinting at vast potential in integrated circuits and innovative electronics manufacturing.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fabrication and enhanced electrical stability of Mn–Co–Fe–Zn–O NTC thin films by low temperature ion-beam-assisted deposition technology\",\"authors\":\"Yibo He, Yuxian Song, Xinmiao Wang, Xijun Yan, Shusheng Pan, Wenwen Kong\",\"doi\":\"10.1007/s10854-024-13760-5\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The Mn–Co–Fe–Zn–O negative temperature coefficient (NTC) thin films, vital for next-gen temperature sensors, face a pivotal hurdle in enhancing electrical stability. This study triumphantly crafted these films with ultra-high stability using ion-beam-assisted deposition (IBAD) at a relatively low temperature (240 °C). All films obtained under three different ion-beam types, Ar, O<sub>2</sub>, and None, exhibit a dense, grain homogeneous morphology as well as a single spinel phase structure, and all show excellent NTC characteristics over the temperature range of 10–90 °C. The XRD peak shift and Raman signal attenuation indicate that ion-beam bombardment exerts control over the crystal structure. The application of Ar ion-beam assistance resulted in a significant reduction in film ageing drift, from 4.23% to 0.58%. This reduction was achieved by the Jahn–Teller distortions induced by the high concentration of Mn<sup>3+</sup>, and the low oxygen vacancy concentration. Further, the low processing temperature augments process compatibility with heat-sensitive substrates, safeguarding them from harm and hinting at vast potential in integrated circuits and innovative electronics manufacturing.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-10-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-13760-5\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13760-5","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Fabrication and enhanced electrical stability of Mn–Co–Fe–Zn–O NTC thin films by low temperature ion-beam-assisted deposition technology
The Mn–Co–Fe–Zn–O negative temperature coefficient (NTC) thin films, vital for next-gen temperature sensors, face a pivotal hurdle in enhancing electrical stability. This study triumphantly crafted these films with ultra-high stability using ion-beam-assisted deposition (IBAD) at a relatively low temperature (240 °C). All films obtained under three different ion-beam types, Ar, O2, and None, exhibit a dense, grain homogeneous morphology as well as a single spinel phase structure, and all show excellent NTC characteristics over the temperature range of 10–90 °C. The XRD peak shift and Raman signal attenuation indicate that ion-beam bombardment exerts control over the crystal structure. The application of Ar ion-beam assistance resulted in a significant reduction in film ageing drift, from 4.23% to 0.58%. This reduction was achieved by the Jahn–Teller distortions induced by the high concentration of Mn3+, and the low oxygen vacancy concentration. Further, the low processing temperature augments process compatibility with heat-sensitive substrates, safeguarding them from harm and hinting at vast potential in integrated circuits and innovative electronics manufacturing.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.