弯曲和拉伸运动中的针织型三电纳米发电机研究

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Viraj Uttamrao Somkuwar, Hema Garg, Shubham Singh, Bipin Kumar
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引用次数: 0

摘要

基于纺织品的三电纳米发电机在收集生物机械能方面具有巨大潜力,因此已成为一种日益增长的研究趋势。针织织物具有极佳的保形性,可紧贴人体肢体,纺织品 TENG 可从滑动、敲击、弯曲和拉伸运动中各种接触分离运动所产生的机械能中获取电能。为了进一步开发纺织品 TENG 的潜力,本研究分析了岭式和镀层针织 TENG 在弯曲和拉伸接触分离模式下的性能。结果表明,拉伸和弯曲运动会改变结构表面的粗糙度,当弯曲和拉伸的强度改变时,会导致电输出的变化。结果显示,脊结构在拉伸模式下的峰值功率密度为 0.27 µW/m2,在弯曲模式下的峰值功率密度为 0.36 µW/m2。针织 TENG 集成到臂套中,对其在运动康复期间监测运动的潜力进行了测试,通过分析输出电压波形来评估和优化康复运动。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Study of knitted-based triboelectric nanogenerators in bending and stretching motion

Textile-based triboelectric nanogenerators have become a growing research trend due to its tremendous potential to harvest biomechanical energy. The knitted textile fabric with its excellent conformability follows the close proximity of the human body limbs, the textile TENG can harvest the electrical energy from mechanical energy generated during the various contact-separation movements during sliding, tapping, bending, and stretching motions. To exploit the potential of textile TENG further, the current study analyses the performance of Ridge and plated knit TENG in bending and stretching contact-separation mode. The results depict the stretching and bending movements change the structural surface roughness, which contributes to the change in the electrical output when the intensity of bending and stretching is altered. The results show that ridge structure achieved a peak power density of 0.27 µW/m2 in the stretching mode and 0.36 µW/m2 in the bending mode. The knit TENG, integrated into an arm sleeve, was tested for its potential in monitoring movements during exercise rehabilitation, analyzing output voltage waveforms to assess and optimize recovery exercises.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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