用于湿度传感器的还原氧化石墨烯替代氧化铋复合材料的合成与研究

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
V. Jagadeesha Angadi, B. Chethan, K. M. Swathi, Shifa Wang, Nipa Roy, Sang Woo Joo, Vinayak Pattar, Shoyebmohamad F. Shaikh, Chander Prakash, Ashok Kumar, Mohd Ubaidullah, M. Atif
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引用次数: 0

摘要

本研究探讨了由不同浓度的氧化铋(Bi2O3)和还原氧化石墨烯(rGO)组成的复合材料的特性和性能。未取代的 α-Bi2O3 纳米颗粒(NPs)的衍射图样显示了与 rGO 晶面相对应的主要反射,计算出的晶格参数为 a = 5.849 Å、b = 8.166 Å 和 c = 7.510 Å。值得注意的是,当 rGO 含量为 20% 时(Bi 0.2),复合材料的电阻在相对湿度(RH)为 11% 到 98% 的范围内显著降低,并呈现指数式下降。据记录,传感器的响应时间为 9 秒,恢复时间为 12 秒。该材料表现出卓越的湿度灵敏度,尤其是在较高的 rGO 浓度下,使其非常适合湿度传感应用。此外,该传感器在 60 天内表现出很高的稳定性,性能始终如一。这些研究结果凸显了 Bi2O3-rGO 复合材料在不同环境条件下用于稳健可靠的传感器应用的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Synthesis and study of reduced graphene oxide substituted Bismuth oxide composite towards humidity sensors

This study investigates the characteristics and performance of a composite material comprising bismuth oxide (Bi2O3) and reduced graphene oxide (rGO) at varying concentrations. The diffraction pattern for un-substituted α-Bi2O3 nanoparticles (NPs) showed major reflections corresponding to rGO crystal faces, with calculated lattice parameters of a = 5.849 Å, b = 8.166 Å, and c = 7.510 Å. The substitution of α-Bi2O3 with rGO preserved the crystalline phase, and the material’s porosity increased with higher rGO concentrations, as verified by XRD and humidity testing. Notably, at a composition of 20% rGO (Bi 0.2), the composite demonstrated a significant reduction in resistance from 11 to 98% relative humidity (RH), showing an exponential decrease. The response time of the sensor was recorded at 9 s, with a recovery time of 12 s. The material exhibited exceptional humidity sensitivity, especially at higher rGO concentrations, making it highly suitable for humidity sensing applications. Furthermore, the sensor demonstrated high stability over a 60-day period, maintaining consistent performance. These findings highlight the potential of the Bi2O3-rGO composite for robust and reliable sensor applications under varying environmental conditions.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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