Ramzi Dhahri, Faouzia Tayari, Hasan B. Albargi, Elkenany Brens Elkenany, A. M. Al-Syadi, Navdeep Sharma, Madan Lal, Kais Iben Nassar
{"title":"溶胶-凝胶法合成的掺钡铁钛酸铋过氧化物纳米粒子的结构、介电和电学特性的综合分析","authors":"Ramzi Dhahri, Faouzia Tayari, Hasan B. Albargi, Elkenany Brens Elkenany, A. M. Al-Syadi, Navdeep Sharma, Madan Lal, Kais Iben Nassar","doi":"10.1007/s10854-024-13691-1","DOIUrl":null,"url":null,"abstract":"<div><p>This research aims to develop a perovskite ceramic with optimized electrical and dielectric properties for applications in energy storage, medical technologies, and electronic devices. A bismuth ferric titanate compound, Bi<sub>0.9</sub>Ba<sub>0.1</sub>Fe<sub>0.8</sub>Ti<sub>0.2</sub>O<sub>₃</sub>, doped with barium at the A-site, was successfully synthesized using the sol–gel method. X-ray diffraction at room temperature confirmed a rhombohedral structure within the R3́C space group. Scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX) revealed an average grain size of 273 nm with uniform grain distribution and chemical composition. The study identified a clear correlation between temperature, frequency, and the material’s electrical characteristics. Impedance spectroscopy and electrical modulus analysis, conducted over a frequency range of 1 kHz to 1 MHz and temperatures between 260 and 340 K, indicated non-Debye relaxation behavior. Additionally, the material’s frequency-dependent electrical conductivity, analyzed through Jonscher’s law at various temperatures, showed that barium doping significantly enhanced conductivity and dielectric properties compared to undoped BiFeTiO₃. Consistent conduction and relaxation mechanisms were observed across the entire temperature range, highlighting the material's potential for use in capacitors and electric fields over a wide range of conditions.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Comprehensive analysis of structural, dielectric, and electrical properties of sol–gel synthesized Ba-doped bismuth ferric titanate perovskite nanoparticles\",\"authors\":\"Ramzi Dhahri, Faouzia Tayari, Hasan B. Albargi, Elkenany Brens Elkenany, A. M. Al-Syadi, Navdeep Sharma, Madan Lal, Kais Iben Nassar\",\"doi\":\"10.1007/s10854-024-13691-1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>This research aims to develop a perovskite ceramic with optimized electrical and dielectric properties for applications in energy storage, medical technologies, and electronic devices. A bismuth ferric titanate compound, Bi<sub>0.9</sub>Ba<sub>0.1</sub>Fe<sub>0.8</sub>Ti<sub>0.2</sub>O<sub>₃</sub>, doped with barium at the A-site, was successfully synthesized using the sol–gel method. X-ray diffraction at room temperature confirmed a rhombohedral structure within the R3́C space group. Scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX) revealed an average grain size of 273 nm with uniform grain distribution and chemical composition. The study identified a clear correlation between temperature, frequency, and the material’s electrical characteristics. Impedance spectroscopy and electrical modulus analysis, conducted over a frequency range of 1 kHz to 1 MHz and temperatures between 260 and 340 K, indicated non-Debye relaxation behavior. Additionally, the material’s frequency-dependent electrical conductivity, analyzed through Jonscher’s law at various temperatures, showed that barium doping significantly enhanced conductivity and dielectric properties compared to undoped BiFeTiO₃. Consistent conduction and relaxation mechanisms were observed across the entire temperature range, highlighting the material's potential for use in capacitors and electric fields over a wide range of conditions.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-10-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-13691-1\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13691-1","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
这项研究旨在开发一种具有优化电学和介电特性的过氧化物陶瓷,以应用于能源储存、医疗技术和电子设备。采用溶胶-凝胶法成功合成了一种在 A 位掺杂钡的钛酸铋铁化合物 Bi0.9Ba0.1Fe0.8Ti0.2O₃。室温下的 X 射线衍射证实了 R3́C 空间群内的斜方体结构。扫描电子显微镜(SEM)和能量色散 X 射线分析(EDX)显示,平均晶粒大小为 273 nm,晶粒分布和化学成分均匀。研究发现,温度、频率和材料的电气特性之间存在明显的相关性。在 1 kHz 至 1 MHz 的频率范围和 260 至 340 K 的温度范围内进行的阻抗光谱和电模量分析表明了非戴贝弛豫行为。此外,通过不同温度下的琼舍尔定律分析该材料随频率变化的电导率,结果表明与未掺杂的 BiFeTiO₃ 相比,掺杂钡能显著提高电导率和介电特性。在整个温度范围内观察到了一致的传导和弛豫机制,凸显了该材料在广泛条件下用于电容器和电场的潜力。
Comprehensive analysis of structural, dielectric, and electrical properties of sol–gel synthesized Ba-doped bismuth ferric titanate perovskite nanoparticles
This research aims to develop a perovskite ceramic with optimized electrical and dielectric properties for applications in energy storage, medical technologies, and electronic devices. A bismuth ferric titanate compound, Bi0.9Ba0.1Fe0.8Ti0.2O₃, doped with barium at the A-site, was successfully synthesized using the sol–gel method. X-ray diffraction at room temperature confirmed a rhombohedral structure within the R3́C space group. Scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX) revealed an average grain size of 273 nm with uniform grain distribution and chemical composition. The study identified a clear correlation between temperature, frequency, and the material’s electrical characteristics. Impedance spectroscopy and electrical modulus analysis, conducted over a frequency range of 1 kHz to 1 MHz and temperatures between 260 and 340 K, indicated non-Debye relaxation behavior. Additionally, the material’s frequency-dependent electrical conductivity, analyzed through Jonscher’s law at various temperatures, showed that barium doping significantly enhanced conductivity and dielectric properties compared to undoped BiFeTiO₃. Consistent conduction and relaxation mechanisms were observed across the entire temperature range, highlighting the material's potential for use in capacitors and electric fields over a wide range of conditions.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.