Theoretical research on a broadband terahertz absorber for thermally controlled radiation emission based on the epsilon-near-zero mode

In this paper, a tunable and ultra-broadband terahertz (THz) absorber is proposed. The absorber, which is built upon the conventional metal–dielectric–metal tri-layer configuration, incorporates a KCl thin film within the dielectric gap situated between the top resonator and the middle dielectric layer. The simulation indicates that the absorber effectively captures more than 90% of terahertz waves between 3.6 and 7.3 THz, achieving absorption of over 99% within the 5.8–6.9 THz range. This unique broadband absorber is enabled by the interaction of plasmon and epsilon-near-zero (ENZ) modes. Additionally, due to the utilization of VO₂ in the top resonator, the designed absorber holds potential to function as a thermally controlled radiation emitter, exhibiting a high emissivity of 90.5% at high temperatures while maintaining a low emissivity of 8.2% at low temperatures. The absorber is uncomplicated and adjustable, offering great potential for use in thermal management, terahertz camouflage, and engineering insulation.