Jia Meng , Chuntao Lan , Chongxiang Pan , Guoxu Liu , Xiong Pu , Chi Zhang , Zhong Lin Wang
{"title":"动态半导体异质结界面上的摩擦光伏效应和三静电效应耦合","authors":"Jia Meng , Chuntao Lan , Chongxiang Pan , Guoxu Liu , Xiong Pu , Chi Zhang , Zhong Lin Wang","doi":"10.1016/j.nanoen.2024.110395","DOIUrl":null,"url":null,"abstract":"<div><div>Tribovoltaic effect at the dynamic semiconductor interface is of great fundamental and practical importance for developing a variety of functional devices; yet, it can be coupled with a series of different physical effects, such as the contact-electrification induced electrostatic effect and mechanical wearing effect, and the coupling mechanisms are still remained to be elucidated. Herein, we investigated the coupling between tribovoltaic and tribo-electrostatic effects at the dynamic heterojunctions of two wide-bandgap semiconductors: zinc oxide (ZnO) and gallium nitride (GaN). It is found that, in the contact-separation mode, the direct-current outputs from tribovoltaic effect can be clearly distinguished from the alternating-current outputs from tribo-electrostatic effect. Then, humidity, external load resistance and pressure force are found to reveal the coupling characteristics of these two effects, that tribovoltaic outputs are less affected by humidity, show smaller matched impedance and are more sensitive to high pressure force, diverging from the tribo-electrostatic outputs. Lastly, we demonstrate that the mechanical wearing effect can be inhibited in contact-separation mode, achieving long-term stability over 50,000 cycles. Therefore, this work provides insights to the mechanism of tribovoltaic effects and practical guidance for high-performances tribovoltaic devices.</div></div>","PeriodicalId":394,"journal":{"name":"Nano Energy","volume":"133 ","pages":"Article 110395"},"PeriodicalIF":16.8000,"publicationDate":"2024-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Coupling of tribovoltaic effect and tribo-electrostatic effect at dynamic semiconductor heterojunction interfaces\",\"authors\":\"Jia Meng , Chuntao Lan , Chongxiang Pan , Guoxu Liu , Xiong Pu , Chi Zhang , Zhong Lin Wang\",\"doi\":\"10.1016/j.nanoen.2024.110395\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Tribovoltaic effect at the dynamic semiconductor interface is of great fundamental and practical importance for developing a variety of functional devices; yet, it can be coupled with a series of different physical effects, such as the contact-electrification induced electrostatic effect and mechanical wearing effect, and the coupling mechanisms are still remained to be elucidated. Herein, we investigated the coupling between tribovoltaic and tribo-electrostatic effects at the dynamic heterojunctions of two wide-bandgap semiconductors: zinc oxide (ZnO) and gallium nitride (GaN). It is found that, in the contact-separation mode, the direct-current outputs from tribovoltaic effect can be clearly distinguished from the alternating-current outputs from tribo-electrostatic effect. Then, humidity, external load resistance and pressure force are found to reveal the coupling characteristics of these two effects, that tribovoltaic outputs are less affected by humidity, show smaller matched impedance and are more sensitive to high pressure force, diverging from the tribo-electrostatic outputs. Lastly, we demonstrate that the mechanical wearing effect can be inhibited in contact-separation mode, achieving long-term stability over 50,000 cycles. Therefore, this work provides insights to the mechanism of tribovoltaic effects and practical guidance for high-performances tribovoltaic devices.</div></div>\",\"PeriodicalId\":394,\"journal\":{\"name\":\"Nano Energy\",\"volume\":\"133 \",\"pages\":\"Article 110395\"},\"PeriodicalIF\":16.8000,\"publicationDate\":\"2024-10-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nano Energy\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2211285524011479\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nano Energy","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2211285524011479","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
Coupling of tribovoltaic effect and tribo-electrostatic effect at dynamic semiconductor heterojunction interfaces
Tribovoltaic effect at the dynamic semiconductor interface is of great fundamental and practical importance for developing a variety of functional devices; yet, it can be coupled with a series of different physical effects, such as the contact-electrification induced electrostatic effect and mechanical wearing effect, and the coupling mechanisms are still remained to be elucidated. Herein, we investigated the coupling between tribovoltaic and tribo-electrostatic effects at the dynamic heterojunctions of two wide-bandgap semiconductors: zinc oxide (ZnO) and gallium nitride (GaN). It is found that, in the contact-separation mode, the direct-current outputs from tribovoltaic effect can be clearly distinguished from the alternating-current outputs from tribo-electrostatic effect. Then, humidity, external load resistance and pressure force are found to reveal the coupling characteristics of these two effects, that tribovoltaic outputs are less affected by humidity, show smaller matched impedance and are more sensitive to high pressure force, diverging from the tribo-electrostatic outputs. Lastly, we demonstrate that the mechanical wearing effect can be inhibited in contact-separation mode, achieving long-term stability over 50,000 cycles. Therefore, this work provides insights to the mechanism of tribovoltaic effects and practical guidance for high-performances tribovoltaic devices.
期刊介绍:
Nano Energy is a multidisciplinary, rapid-publication forum of original peer-reviewed contributions on the science and engineering of nanomaterials and nanodevices used in all forms of energy harvesting, conversion, storage, utilization and policy. Through its mixture of articles, reviews, communications, research news, and information on key developments, Nano Energy provides a comprehensive coverage of this exciting and dynamic field which joins nanoscience and nanotechnology with energy science. The journal is relevant to all those who are interested in nanomaterials solutions to the energy problem.
Nano Energy publishes original experimental and theoretical research on all aspects of energy-related research which utilizes nanomaterials and nanotechnology. Manuscripts of four types are considered: review articles which inform readers of the latest research and advances in energy science; rapid communications which feature exciting research breakthroughs in the field; full-length articles which report comprehensive research developments; and news and opinions which comment on topical issues or express views on the developments in related fields.