Jianyong Pan, Hao Kan, Zhaorui Liu, Song Gao, Enxiu Wu, Yang Li, Chunwei Zhang
{"title":"具有增强线性和突触可塑性的柔性 TiO2-WO3-x 混合记忆晶体管,可用于神经形态计算中的精确权重调整","authors":"Jianyong Pan, Hao Kan, Zhaorui Liu, Song Gao, Enxiu Wu, Yang Li, Chunwei Zhang","doi":"10.1038/s41528-024-00356-6","DOIUrl":null,"url":null,"abstract":"Tungsten oxide (WO3)-based memristors show promising applications in neuromorphic computing. However, single-layer WO3 memristors suffer from issues such as weak memory performance and nonlinear conductance variations. In this work, a functional layer based on the hybrids of WO3−x and TiO2 is proposed for constructing flexible memristors featuring outstanding synaptic characteristics. Applying diverse electrical stimulations to the memristor enables a range of synaptic functions, elucidating its conduction mechanism through the conductive filament model. The incorporation of TiO2 not only enhances the memristor’s memory characteristics but makes its conductance more linear, symmetrical and uniform during the long-term changes. Furthermore, in view of the enhanced device performance by TiO2 doping, the potential of this device for simple behavioral simulation and processing of complex computing problems is explored. The “learning-forgetting-relearning” characteristics and device integrability are visually demonstrated. Applying the device to a convolutional neural network, the recognition accuracy of MNIST handwritten digits reaches 98.7%.","PeriodicalId":48528,"journal":{"name":"npj Flexible Electronics","volume":null,"pages":null},"PeriodicalIF":12.3000,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41528-024-00356-6.pdf","citationCount":"0","resultStr":"{\"title\":\"Flexible TiO2-WO3−x hybrid memristor with enhanced linearity and synaptic plasticity for precise weight tuning in neuromorphic computing\",\"authors\":\"Jianyong Pan, Hao Kan, Zhaorui Liu, Song Gao, Enxiu Wu, Yang Li, Chunwei Zhang\",\"doi\":\"10.1038/s41528-024-00356-6\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Tungsten oxide (WO3)-based memristors show promising applications in neuromorphic computing. However, single-layer WO3 memristors suffer from issues such as weak memory performance and nonlinear conductance variations. In this work, a functional layer based on the hybrids of WO3−x and TiO2 is proposed for constructing flexible memristors featuring outstanding synaptic characteristics. Applying diverse electrical stimulations to the memristor enables a range of synaptic functions, elucidating its conduction mechanism through the conductive filament model. The incorporation of TiO2 not only enhances the memristor’s memory characteristics but makes its conductance more linear, symmetrical and uniform during the long-term changes. Furthermore, in view of the enhanced device performance by TiO2 doping, the potential of this device for simple behavioral simulation and processing of complex computing problems is explored. The “learning-forgetting-relearning” characteristics and device integrability are visually demonstrated. Applying the device to a convolutional neural network, the recognition accuracy of MNIST handwritten digits reaches 98.7%.\",\"PeriodicalId\":48528,\"journal\":{\"name\":\"npj Flexible Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":12.3000,\"publicationDate\":\"2024-10-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.nature.com/articles/s41528-024-00356-6.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"npj Flexible Electronics\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.nature.com/articles/s41528-024-00356-6\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"npj Flexible Electronics","FirstCategoryId":"88","ListUrlMain":"https://www.nature.com/articles/s41528-024-00356-6","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Flexible TiO2-WO3−x hybrid memristor with enhanced linearity and synaptic plasticity for precise weight tuning in neuromorphic computing
Tungsten oxide (WO3)-based memristors show promising applications in neuromorphic computing. However, single-layer WO3 memristors suffer from issues such as weak memory performance and nonlinear conductance variations. In this work, a functional layer based on the hybrids of WO3−x and TiO2 is proposed for constructing flexible memristors featuring outstanding synaptic characteristics. Applying diverse electrical stimulations to the memristor enables a range of synaptic functions, elucidating its conduction mechanism through the conductive filament model. The incorporation of TiO2 not only enhances the memristor’s memory characteristics but makes its conductance more linear, symmetrical and uniform during the long-term changes. Furthermore, in view of the enhanced device performance by TiO2 doping, the potential of this device for simple behavioral simulation and processing of complex computing problems is explored. The “learning-forgetting-relearning” characteristics and device integrability are visually demonstrated. Applying the device to a convolutional neural network, the recognition accuracy of MNIST handwritten digits reaches 98.7%.
期刊介绍:
npj Flexible Electronics is an online-only and open access journal, which publishes high-quality papers related to flexible electronic systems, including plastic electronics and emerging materials, new device design and fabrication technologies, and applications.