{"title":"存在锌空位时 Al-P 共掺氧化锌的电子和光学特性的第一原理研究》(First Principles Study of Electronic and Optical Properties of Al-P Co-Doped ZnO in the Presence of Zn Vacancies)。","authors":"Zhengguang Guo, Yonghong Yao, Jin Liu","doi":"10.1002/open.202400222","DOIUrl":null,"url":null,"abstract":"<p><p>The BP neural network optimized by the Adam algorithm was used to predict the defect formation energy of Al-P co-doped ZnO systems with different concentrations of P replacing O under the presence of different concentrations of V<sub>Zn</sub>. It was found that the easily formed Al<sub>Zn</sub>Po-1V<sub>Zn</sub>, Al<sub>Zn</sub>P<sub>O</sub>-2V<sub>Zn</sub>, and Al<sub>Zn</sub>2P<sub>O</sub>-1V<sub>Zn</sub> systems. The first principles of density function were used to study the geometric, electronic, and optical properties of each system. The simulation results show that the bandgap values of the three systems have decreased relative to the intrinsic ZnO, among which Al<sub>Zn</sub>P<sub>O</sub>-1V<sub>Zn</sub> and Al<sub>Zn</sub>P<sub>O</sub>-2V<sub>Zn</sub> is still a p-type conductive system, Al<sub>Zn</sub>P<sub>O</sub>-2V<sub>Zn</sub> has the highest conductivity. From the analysis of reflectivity, absorption rate, and light transmittance, Al<sub>Zn</sub>2P<sub>O</sub>-1V<sub>Zn</sub> has the most relatively excellent optical properties, followed by AlznPo-2V<sub>Zn</sub>.</p>","PeriodicalId":9831,"journal":{"name":"ChemistryOpen","volume":" ","pages":"e202400222"},"PeriodicalIF":2.5000,"publicationDate":"2024-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"First Principles Study of Electronic and Optical Properties of Al-P Co-Doped ZnO in the Presence of Zn Vacancies.\",\"authors\":\"Zhengguang Guo, Yonghong Yao, Jin Liu\",\"doi\":\"10.1002/open.202400222\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>The BP neural network optimized by the Adam algorithm was used to predict the defect formation energy of Al-P co-doped ZnO systems with different concentrations of P replacing O under the presence of different concentrations of V<sub>Zn</sub>. It was found that the easily formed Al<sub>Zn</sub>Po-1V<sub>Zn</sub>, Al<sub>Zn</sub>P<sub>O</sub>-2V<sub>Zn</sub>, and Al<sub>Zn</sub>2P<sub>O</sub>-1V<sub>Zn</sub> systems. The first principles of density function were used to study the geometric, electronic, and optical properties of each system. The simulation results show that the bandgap values of the three systems have decreased relative to the intrinsic ZnO, among which Al<sub>Zn</sub>P<sub>O</sub>-1V<sub>Zn</sub> and Al<sub>Zn</sub>P<sub>O</sub>-2V<sub>Zn</sub> is still a p-type conductive system, Al<sub>Zn</sub>P<sub>O</sub>-2V<sub>Zn</sub> has the highest conductivity. From the analysis of reflectivity, absorption rate, and light transmittance, Al<sub>Zn</sub>2P<sub>O</sub>-1V<sub>Zn</sub> has the most relatively excellent optical properties, followed by AlznPo-2V<sub>Zn</sub>.</p>\",\"PeriodicalId\":9831,\"journal\":{\"name\":\"ChemistryOpen\",\"volume\":\" \",\"pages\":\"e202400222\"},\"PeriodicalIF\":2.5000,\"publicationDate\":\"2024-10-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ChemistryOpen\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://doi.org/10.1002/open.202400222\",\"RegionNum\":4,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ChemistryOpen","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.1002/open.202400222","RegionNum":4,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
利用亚当算法优化的 BP 神经网络预测了不同浓度 P 取代 O 的 Al-P 共掺杂 ZnO 系统在不同浓度 VZn 存在下的缺陷形成能。结果发现,容易形成 AlZnPo-1VZn、AlZnPO-2VZn 和 AlZn2PO-1VZn 系统。利用密度函数第一性原理研究了各体系的几何、电子和光学特性。模拟结果表明,相对于本征 ZnO,三个体系的带隙值都有所下降,其中 AlZnPO-1VZn 和 AlZnPO-2VZn 仍为 p 型导电体系,AlZnPO-2VZn 的导电率最高。从反射率、吸收率和透光率分析,AlZn2PO-1VZn 的光学性能相对最优异,其次是 AlznPo-2VZn。
First Principles Study of Electronic and Optical Properties of Al-P Co-Doped ZnO in the Presence of Zn Vacancies.
The BP neural network optimized by the Adam algorithm was used to predict the defect formation energy of Al-P co-doped ZnO systems with different concentrations of P replacing O under the presence of different concentrations of VZn. It was found that the easily formed AlZnPo-1VZn, AlZnPO-2VZn, and AlZn2PO-1VZn systems. The first principles of density function were used to study the geometric, electronic, and optical properties of each system. The simulation results show that the bandgap values of the three systems have decreased relative to the intrinsic ZnO, among which AlZnPO-1VZn and AlZnPO-2VZn is still a p-type conductive system, AlZnPO-2VZn has the highest conductivity. From the analysis of reflectivity, absorption rate, and light transmittance, AlZn2PO-1VZn has the most relatively excellent optical properties, followed by AlznPo-2VZn.
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