{"title":"破对称耦合圆柱形量子阱导线：强激光场对谐波发生的影响","authors":"B. O. Alaydin, O. Ozturk, D. Altun, E. Ozturk","doi":"10.1140/epjp/s13360-024-05715-w","DOIUrl":null,"url":null,"abstract":"<div><p>This study explores the high harmonic generations in GaAs/Al<sub>x</sub>Ga<sub>1-x</sub>As asymmetric coupled cylindrical quantum well wires (CCQWWs) under varying intense laser fields (ILFs). The structural parameters and theoretical framework are detailed, including the Schrödinger equation for the CCQWW heterojunction and the Floquet method to model ILF effects. Numerical simulations reveal alterations in the confinement potential and energy states of CCQWWs with increasing ILF intensity. Notably, significant changes occur in the potential well shape, influencing the localization of energy states. Transition energies and dipole moment matrix elements are analyzed, highlighting shifts in resonance peaks and their intensities. The study identifies blue-shift points at α<sub>0</sub> (ILF parameter) values of 4.4 nm, 4.7 nm, and 3.7 nm for transition energies E<sub>21</sub>, E<sub>31</sub>/2, and E<sub>41</sub>/3, respectively, followed by red-shift trends as α<sub>0</sub> increases further. Maximum enhancements are observed in the second harmonic generation coefficient at ILF α<sub>0</sub> = 6 nm and the third harmonic generation coefficient at α<sub>0</sub> = 8 nm, which is 1000 times higher than at α<sub>0</sub> = 0 nm. These findings underscore the potential for enhancing semiconductor device production through optimized ILF induced high harmonic generation.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":792,"journal":{"name":"The European Physical Journal Plus","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1140/epjp/s13360-024-05715-w.pdf","citationCount":"0","resultStr":"{\"title\":\"Coupled cylindrical quantum well wires in broken symmetry: effects of intense laser field on the harmonic generations\",\"authors\":\"B. O. Alaydin, O. Ozturk, D. Altun, E. Ozturk\",\"doi\":\"10.1140/epjp/s13360-024-05715-w\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>This study explores the high harmonic generations in GaAs/Al<sub>x</sub>Ga<sub>1-x</sub>As asymmetric coupled cylindrical quantum well wires (CCQWWs) under varying intense laser fields (ILFs). The structural parameters and theoretical framework are detailed, including the Schrödinger equation for the CCQWW heterojunction and the Floquet method to model ILF effects. Numerical simulations reveal alterations in the confinement potential and energy states of CCQWWs with increasing ILF intensity. Notably, significant changes occur in the potential well shape, influencing the localization of energy states. Transition energies and dipole moment matrix elements are analyzed, highlighting shifts in resonance peaks and their intensities. The study identifies blue-shift points at α<sub>0</sub> (ILF parameter) values of 4.4 nm, 4.7 nm, and 3.7 nm for transition energies E<sub>21</sub>, E<sub>31</sub>/2, and E<sub>41</sub>/3, respectively, followed by red-shift trends as α<sub>0</sub> increases further. Maximum enhancements are observed in the second harmonic generation coefficient at ILF α<sub>0</sub> = 6 nm and the third harmonic generation coefficient at α<sub>0</sub> = 8 nm, which is 1000 times higher than at α<sub>0</sub> = 0 nm. These findings underscore the potential for enhancing semiconductor device production through optimized ILF induced high harmonic generation.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>\",\"PeriodicalId\":792,\"journal\":{\"name\":\"The European Physical Journal Plus\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://link.springer.com/content/pdf/10.1140/epjp/s13360-024-05715-w.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The European Physical Journal Plus\",\"FirstCategoryId\":\"4\",\"ListUrlMain\":\"https://link.springer.com/article/10.1140/epjp/s13360-024-05715-w\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The European Physical Journal Plus","FirstCategoryId":"4","ListUrlMain":"https://link.springer.com/article/10.1140/epjp/s13360-024-05715-w","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
Coupled cylindrical quantum well wires in broken symmetry: effects of intense laser field on the harmonic generations
This study explores the high harmonic generations in GaAs/AlxGa1-xAs asymmetric coupled cylindrical quantum well wires (CCQWWs) under varying intense laser fields (ILFs). The structural parameters and theoretical framework are detailed, including the Schrödinger equation for the CCQWW heterojunction and the Floquet method to model ILF effects. Numerical simulations reveal alterations in the confinement potential and energy states of CCQWWs with increasing ILF intensity. Notably, significant changes occur in the potential well shape, influencing the localization of energy states. Transition energies and dipole moment matrix elements are analyzed, highlighting shifts in resonance peaks and their intensities. The study identifies blue-shift points at α0 (ILF parameter) values of 4.4 nm, 4.7 nm, and 3.7 nm for transition energies E21, E31/2, and E41/3, respectively, followed by red-shift trends as α0 increases further. Maximum enhancements are observed in the second harmonic generation coefficient at ILF α0 = 6 nm and the third harmonic generation coefficient at α0 = 8 nm, which is 1000 times higher than at α0 = 0 nm. These findings underscore the potential for enhancing semiconductor device production through optimized ILF induced high harmonic generation.
期刊介绍：
The aims of this peer-reviewed online journal are to distribute and archive all relevant material required to document, assess, validate and reconstruct in detail the body of knowledge in the physical and related sciences.
The scope of EPJ Plus encompasses a broad landscape of fields and disciplines in the physical and related sciences - such as covered by the topical EPJ journals and with the explicit addition of geophysics, astrophysics, general relativity and cosmology, mathematical and quantum physics, classical and fluid mechanics, accelerator and medical physics, as well as physics techniques applied to any other topics, including energy, environment and cultural heritage.
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