为具有相对介电常数的无铅 Cs2TiBr6 基 PSC 选择高效 HTL 以及优化载流子寿命:一项理论研究

IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Kunal Chakraborty, Nageswara Rao Medikondu, Vinjamuri Venkata Kamesh, Vishal Sorathiya, Sudipta Das, Mahua Gupta Choudhury, Samrat Paul
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引用次数: 0

摘要

这项研究工作是利用 SCAPS-1D 软件框架,在环境条件下对 Cs2TiBr6 单卤化物 Perovskite 太阳能电池 (PSC) 的常规 ni-p 异质结结构进行的比较研究。我们研究了不同空穴传输层(HTL)P3HT、CuO、Cu2O 和 MoO3 的性能优化,并通过光学和电子特性分析,为基于 FTO/TiO2/Cs2TiBr6/HTL/Ag 的 PSC 模块确定了合适的 HTL。其他性能参数、C-V(电容-电压)和 M-S(莫特-肖特基)图分析表明,MoO3HTL 具有更好的光伏(PV)性能特征。与基于 Cs2TiBr6/P3HT、Cs2TiBr6/CuO 和 Cs2TiBr6/Cu2O 的 PSC 相比,基于 Cs2TiBr6/MoO3 的 PSC 显示出更高的开路电压(VOC = 0.2434 V)和功率转换效率(PCE = 4.8%)。另一方面,所研究的 PSC 材料 Cs2TiBr6/MoO3 在 190 nm 波长处显示出可见光发射边缘,具有优越的半圆形形状,在相对介电常数、载流子寿命、扩散长度和界面缺陷密度变化的背景下具有更高的光伏参数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Selection of efficient HTL for lead-free Cs2TiBr6-based PSC with relative permittivity, & carrier life time optimization: a theoretical study

Selection of efficient HTL for lead-free Cs2TiBr6-based PSC with relative permittivity, & carrier life time optimization: a theoretical study

This research work represents a comparative study of the regular n-i-p heterojunction structure ofCs2TiBr6 single halide Perovskite solar cells (PSCs) using the SCAPS-1D software framework under ambient conditions.We have studied the performance optimization of different hole transfer layers (HTLs)P3HT, CuO, Cu2O, and MoO3 respectivelyfollowed by optical, and electronic properties analysis to identify the appropriate HTL for the FTO/TiO2/Cs2TiBr6/HTL/Ag-based PSC module.Other performance parameters, C-V (Capacitance–voltage), and M-S (Mott-Schottky) plot analysisshows thatMoO3HTL has better photovoltaic (PV) performance characteristics. Cs2TiBr6/MoO3 based PSC shows higher open circuit voltage (VOC = 0.2434 V), power conversion efficiency (PCE = 4.8%)compares to Cs2TiBr6/ P3HT, Cs2TiBr6/CuO, Cs2TiBr6/Cu2O based PSC. On the other look, investigated PSC material Cs2TiBr6/MoO3has shown visible light emission edge at 190 nm wavelength, superior semi-circular shape, higher PV parameters in the context of variation in relative permittivity, carrier lifetime, diffusion length, and defect density at the interfaces.The optimized carrier lifetime of Cs2TiBr6/MoO3-based PSC has been recorded as 50 ns at 500 nm thickness of active material.

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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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