化学共沉淀法制备的 Ga3+ 取代 Zn2Y 六铁氧体的磁结构和巨大介电性能

IF 2.8 3区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER
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引用次数: 0

摘要

通过改良化学共沉淀法制备了 Y 型 Ba0.5Sr1.5Zn2Fe12-xGaxO22(x = 0.0、0.2、0.4、0.6、0.8 和 1.0)六铁氧体。X 射线衍射(XRD)结果表明,这些样品为单相,空间群为 R3-‾m。场发射扫描电子显微镜(FE-SEM)测量结果表明,晶粒呈六角板状,直径为 2-5 μm。在 M-T 图中,出现了各种磁性结构,包括正螺旋、纵锥形(LC)、混合锥形(MC)和准铁磁(Collinear FIM)。在这一系列样品中,介电常数 (ε′) 的值实现了从 102 到 104 的数量级增长。总之,具有可控磁性结构和巨大介电常数的 Ba0.5Sr1.5Zn2Fe12-xGaxO22 是现代电子设备微型化的潜在材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Magnetic structure and colossal dielectric properties in Ga3+ substituted Zn2Y hexaferrites by chemical co-precipitation method
Y-type Ba0.5Sr1.5Zn2Fe12-xGaxO22 (x = 0.0, 0.2, 0.4, 0.6, 0.8 and 1.0) hexaferrites are prepared through modified chemical co-precipitation method. X-ray diffraction (XRD) results reveal that these samples are single-phase and the space group is R3m. The field-emission scanning electronic microscope (FE-SEM) measurements indicate that the grains are hexagonal-plate with a diameter of 2–5 μm. In the M-T diagrams, various magnetic structures are modulated, including proper-screw, longitudinal conical (LC), mixed conical (MC), and collinear ferrimagnetic (collinear FIM). In this series of samples, the values of dielectric constant (ε) achieve an order increase from 102 to 104. For the best x = 0.8 sample, the ε is as high as 1804.76 at 1 MHz and 300 K. In conclusion, Ba0.5Sr1.5Zn2Fe12-xGaxO22 with controllable magnetic structures and colossal dielectric constant are potential materials for miniaturization of modern electronic devices.
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来源期刊
Physica B-condensed Matter
Physica B-condensed Matter 物理-物理:凝聚态物理
CiteScore
4.90
自引率
7.10%
发文量
703
审稿时长
44 days
期刊介绍: Physica B: Condensed Matter comprises all condensed matter and material physics that involve theoretical, computational and experimental work. Papers should contain further developments and a proper discussion on the physics of experimental or theoretical results in one of the following areas: -Magnetism -Materials physics -Nanostructures and nanomaterials -Optics and optical materials -Quantum materials -Semiconductors -Strongly correlated systems -Superconductivity -Surfaces and interfaces
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