Eu3+ 激活的氟硅酸盐 Na2MgGd2[SiO3]4F2 的光谱特性和发光应用

IF 3.9 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Suyin Zhang, Qinhua Wei, Hang Yin, Gao Tang, Laishun Qin
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引用次数: 0

摘要

本研究报告了新型 Eu3+ 掺杂 Na2MgGd2[SiO3]4F2 荧光粉的发光光谱及其应用。X 射线粉末衍射证实了样品的纯相形成,具有单斜空间群 P21/c(No:14)。这些荧光粉在 613 纳米波长处通过电偶极子跃迁 5D0→7F2 实现了高效的红色发射。最佳掺杂浓度约为 25 摩尔%。Na2MgGd2[SiO3]4F2:0.25Eu3+的量子效率(QE)高达57%,具有极佳的热稳定性和纯色度。使用 InGaN 芯片和 Na2MgGd2[SiO3]4F2:0.25Eu3+封装了红光和白光发光二极管器件。制成的白光发光二极管的 CIE 坐标为(x = 0.33,y = 0.34),非常接近国家电视系统委员会的白点(x = 0.33,y = 0.33)。WLED 的显色指数(CRI,Ra)和相关色温(CCT)分别为 91 和 4400 K。结果表明,作为一种红色发光荧光粉,它是制备近紫外/蓝光 InGaN 基 WLED 的潜在候选材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Spectral characteristics and luminescence applications of Eu3+-activated fluorosilicate Na2MgGd2[SiO3]4F2
This work reports the luminescence spectra and application of novel Eu3+-doped Na2MgGd2[SiO3]4F2 phosphor. The X-ray powder diffraction confirmed the pure phase formation of the samples with the monoclinic space group P21/c (No:14). The phosphors demonstrated efficient red emission at 613 nm from the electric dipole transitions 5D07F2. The optimal doping concentration was found to be approximately 25 mol%. Na2MgGd2[SiO3]4F2:0.25Eu3+ exhibits a high quantum efficiency (QE) of 57 % with excellent thermal stability and pure chromaticity. Red- and the white light-emitting diode devices were packaged using InGaN chips and Na2MgGd2[SiO3]4F2:0.25Eu3+. The fabricated WLED has CIE coordinates of (x = 0.33, y = 0.34), which are very close to the white point in the National Television System Committee (x = 0.33, y = 0.33). The color rendering index (CRI, Ra) and correlated color temperature (CCT) of the WLED are 91 and 4400 K, respectively. The results show that as a red luminescent phosphor, it is a potential candidate for the preparation of near-UV/blue InGaN-based WLEDs.
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来源期刊
CiteScore
5.60
自引率
2.80%
发文量
481
审稿时长
3.5 months
期刊介绍: The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.
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