Shaan Bibi Jaffri, Khuram Shahzad Ahmad, Jehad S. Al-Hawadi, Niharika Maley, Ram K. Gupta, Ghulam Abbas Ashraf, Aboud Ahmed Awadh Bahajjaj
{"title":"通过单源前驱体路线制备的半导体 BaS3:La2S3:DyS1.8 二元金属卤化物异质系统：阐释储能潜力","authors":"Shaan Bibi Jaffri, Khuram Shahzad Ahmad, Jehad S. Al-Hawadi, Niharika Maley, Ram K. Gupta, Ghulam Abbas Ashraf, Aboud Ahmed Awadh Bahajjaj","doi":"10.1007/s00339-024-07947-0","DOIUrl":null,"url":null,"abstract":"<div><p>The current study is concerned with understanding the synthesis and application of the diversified BaS<sub>3</sub>:La<sub>2</sub>S<sub>3</sub>:Dy<sub>1.8</sub> dithiocarbamate sulphide by the single source precursor (SSP) approach. Analytical approaches were used to evaluate the optical, crystalline, vibrational crosslinking, morphological, and thermal properties of BaS<sub>3</sub>:La<sub>2</sub>S<sub>3</sub>:Dy<sub>1.8</sub> chalcogenide. The synthesized chalcogenide has an average crystallite size of 16.35 nm and mixed phases, with a direct band gap energy of 3.9 eV. The study of functional groups revealed the presence of metal sulphide bonds. In terms of morphology, BaS<sub>3</sub>:La<sub>2</sub>S<sub>3</sub>:Dy<sub>1.8</sub> chalcogenide has an uneven shape with a small amount of aggregation. The electrochemical charge storage behavior of BaS<sub>3</sub>:La<sub>2</sub>S<sub>3</sub>:Dy<sub>1.8</sub> was studied using a nickel foam electrode. The trichalcogenide-decorated electrode exhibited charge-storing behavior, with a specific capacitance of 723 F g<sup>− 1</sup> determined by cyclic voltammetry. The electrode has a specific power density of 11,166 W kg<sup>− 1</sup> and a low series resistance of 0.9 Ω, as shown by impedance measurements.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":null,"pages":null},"PeriodicalIF":2.5000,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s00339-024-07947-0.pdf","citationCount":"0","resultStr":"{\"title\":\"Semiconducting BaS3:La2S3:DyS1.8 multinary metal chalcogenide hetero-system prepared via single source precursor route: expounding energy storage potential\",\"authors\":\"Shaan Bibi Jaffri, Khuram Shahzad Ahmad, Jehad S. Al-Hawadi, Niharika Maley, Ram K. Gupta, Ghulam Abbas Ashraf, Aboud Ahmed Awadh Bahajjaj\",\"doi\":\"10.1007/s00339-024-07947-0\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The current study is concerned with understanding the synthesis and application of the diversified BaS<sub>3</sub>:La<sub>2</sub>S<sub>3</sub>:Dy<sub>1.8</sub> dithiocarbamate sulphide by the single source precursor (SSP) approach. Analytical approaches were used to evaluate the optical, crystalline, vibrational crosslinking, morphological, and thermal properties of BaS<sub>3</sub>:La<sub>2</sub>S<sub>3</sub>:Dy<sub>1.8</sub> chalcogenide. The synthesized chalcogenide has an average crystallite size of 16.35 nm and mixed phases, with a direct band gap energy of 3.9 eV. The study of functional groups revealed the presence of metal sulphide bonds. In terms of morphology, BaS<sub>3</sub>:La<sub>2</sub>S<sub>3</sub>:Dy<sub>1.8</sub> chalcogenide has an uneven shape with a small amount of aggregation. The electrochemical charge storage behavior of BaS<sub>3</sub>:La<sub>2</sub>S<sub>3</sub>:Dy<sub>1.8</sub> was studied using a nickel foam electrode. The trichalcogenide-decorated electrode exhibited charge-storing behavior, with a specific capacitance of 723 F g<sup>− 1</sup> determined by cyclic voltammetry. The electrode has a specific power density of 11,166 W kg<sup>− 1</sup> and a low series resistance of 0.9 Ω, as shown by impedance measurements.</p></div>\",\"PeriodicalId\":473,\"journal\":{\"name\":\"Applied Physics A\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.5000,\"publicationDate\":\"2024-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://link.springer.com/content/pdf/10.1007/s00339-024-07947-0.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics A\",\"FirstCategoryId\":\"4\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s00339-024-07947-0\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics A","FirstCategoryId":"4","ListUrlMain":"https://link.springer.com/article/10.1007/s00339-024-07947-0","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Semiconducting BaS3:La2S3:DyS1.8 multinary metal chalcogenide hetero-system prepared via single source precursor route: expounding energy storage potential
The current study is concerned with understanding the synthesis and application of the diversified BaS3:La2S3:Dy1.8 dithiocarbamate sulphide by the single source precursor (SSP) approach. Analytical approaches were used to evaluate the optical, crystalline, vibrational crosslinking, morphological, and thermal properties of BaS3:La2S3:Dy1.8 chalcogenide. The synthesized chalcogenide has an average crystallite size of 16.35 nm and mixed phases, with a direct band gap energy of 3.9 eV. The study of functional groups revealed the presence of metal sulphide bonds. In terms of morphology, BaS3:La2S3:Dy1.8 chalcogenide has an uneven shape with a small amount of aggregation. The electrochemical charge storage behavior of BaS3:La2S3:Dy1.8 was studied using a nickel foam electrode. The trichalcogenide-decorated electrode exhibited charge-storing behavior, with a specific capacitance of 723 F g− 1 determined by cyclic voltammetry. The electrode has a specific power density of 11,166 W kg− 1 and a low series resistance of 0.9 Ω, as shown by impedance measurements.
期刊介绍：
Applied Physics A publishes experimental and theoretical investigations in applied physics as regular articles, rapid communications, and invited papers. The distinguished 30-member Board of Editors reflects the interdisciplinary approach of the journal and ensures the highest quality of peer review.
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