Wei-Sheng Liu, Sui-Hua Wu, G. Balaji, Li-Cheng Huang, Chung-Kai Chi, Kuo-Jui Hu, Hsing-Chun Kuo
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引用次数: 0
摘要
在这项研究中,我们采用射频磁控溅射技术在玻璃基板上沉积高质量的纯镓氮化镓薄膜。我们对沉积过程进行了微调,以优化 GaN 晶体质量。为了进一步提高玻璃基板上生长的氮化镓薄膜的晶体质量,我们引入了同样在同一腔室中溅射沉积的氮化镓缓冲层。在反应溅射过程中,我们使用纯 6 N 氮气作为工作气体,薄膜沉积温度保持在 600 ℃。我们对氮化镓薄膜进行了全面研究,以评估其化学成分、结构特性、光电特性和形态。氮化镓薄膜的 X 射线衍射测量结果表明,氮化镓(002)晶相的 2θ 角约为 34.2°,半最大全宽为 0.85°。低温光致发光光谱揭示了低温光致发光光谱中 3.36 eV(369 nm)处的带边发射。我们的研究成果最终证明了射频磁控溅射技术适用于在玻璃基底上沉积高质量的氮化镓薄膜。这些氮化镓薄膜在多种光电设备中的应用潜力巨大。
Studies on high quality GaN/AlN deposited on glass substrates by radio-frequency reactive sputtering
In this study, we employed radio frequency magnetron sputtering technology with pure gallium to deposit high-quality GaN thin films onto glass substrates. The deposition process was fine-tuned to optimize the GaN crystal quality. To further enhance the crystal quality of the GaN films grown on glass substrates, we introduced an AlN buffer layer which was also sputter deposited in the same chamber. For the reactive sputtering process, we utilized pure 6 N nitrogen as the working gas, and the thin-film deposition temperature was maintained at 600 °C. Comprehensive investigations were conducted on the GaN thin films to assess their chemical composition, structural properties, optoelectronic characteristics, and morphology. X-ray diffraction measurements of the GaN thin films revealed a crystalline phase of GaN (002) with a 2θ angle of approximately 34.2° and a full width at half maximum of 0.85°. Low-temperature photoluminescence spectroscopy unveiled a band-edge emission at 3.36 eV (369 nm) in the low-temperature photoluminescence spectrum. Our research findings conclusively demonstrate the suitability of radio-frequency magnetron sputtering for depositing high-quality GaN thin films on glass substrates. These GaN films exhibit significant potential for applications in several optoelectronic devices.
期刊介绍:
Applied Physics A publishes experimental and theoretical investigations in applied physics as regular articles, rapid communications, and invited papers. The distinguished 30-member Board of Editors reflects the interdisciplinary approach of the journal and ensures the highest quality of peer review.