通往高温约瑟夫森多结器件之路

Xu Wang;Fucong Chen;Zefeng Lin;Shibing Tian;Chunguang Li;Victor Kornev;Nikolay Kolotinskiy
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引用次数: 0

摘要

我们报告了利用聚焦氦离子束破坏技术在高温超导体(HTS)约瑟夫森结制造工艺方面取得的进展,并讨论了 HTS 多结器件技术可实现的预期器件性能。约瑟夫森结可达到的高特性电压值 $V_{c}=I_{c}R_{N}$ 和设计大量任意位置约瑟夫森结的能力,使得即使使用单个 $\mathrm{YBa}_{2}\mathrm{Cu}_{3}\mathrm{O}_{7- x}$ 膜层,也能缩小低温超导体 (LTS) 和 HTS 电路设计能力的现有差距。本文提出了一种单层拓扑结构的有源电子小天线,并考虑了其电压响应特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
On the Path to High-Temperature Josephson Multi-Junction Devices
We report our progress in the high-temperature superconductor (HTS) Josephson junction fabrication process founded on utilizing a focused helium ion beam damaging technique and discuss the expected device performance attainable with the HTS multi-junction device technology. Both the achievable high value of characteristic voltage $V_{c}=I_{c}R_{N}$ of Josephson junctions and the ability to design a large number of arbitrary located Josephson junctions allow narrowing the existing gap in design abilities for low-temperature superconductor (LTS) and HTS circuits even with using a single $\mathrm{YBa}_{2}\mathrm{Cu}_{3}\mathrm{O}_{7- x}$ film layer. A one-layer topology of active electrically small antenna is suggested and its voltage response characteristics are considered.
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