Jonathan Henriques*, Dyhia Tamsaout, Ludovic Largeau, Edmond Cambril, Lucie Valera, Gwénolé Jacopin, Maria Tchernycheva, Jean-Christophe Harmand, Joël Eymery and Christophe Durand*,
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引用次数: 0
摘要
我们报告了通过金属有机气相外延技术在石墨烯上选择性地生长 N 极 GaN μ-platelets 的过程。第一步,在二氧化硅上的图案化石墨烯阵列上通过选择性分子束外延生长的 GaN 纳米线被用作成核种子。由于凝聚机制不同,石墨烯斑块的初始半径会导致 GaN μ-platelet 的光学和结晶质量不同。使用带有大量纳米线种子的大石墨烯斑块(250 nm)可提高图案化石墨烯的生长选择性,但会牺牲结构质量(存在空隙、堆积断层、位错和反转域)。相反,使用较小的斑块(65 nm)可以从非常有限的种子数量(3 根纳米线)中生长出微小板块,并显著减少扩展缺陷的数量。这些观察结果与阴极荧光光学测量和高分辨率透射电子显微镜观察结果直接相关,这些观察结果是在不同石墨烯贴片半径(65、90 和 250 nm)的相同 μ-platelet 上进行的。对缺陷的形成进行了讨论,并通过成核、内部和相互凝聚机制对缺陷的形成提供了支持。
Selective Area Growth of GaN μ-Platelets on Graphene
We report the selective area growth of N-polar GaN μ-platelets on graphene by metal–organic vapor-phase epitaxy. In a first step, GaN nanowires grown by selective molecular beam epitaxy on patterned graphene arrays on SiO2 are used as nucleation seeds. The initial radius of the graphene patches results in different optical and crystalline quality of the GaN μ-platelets due to different coalescence mechanisms. The use of large graphene patches (250 nm) with significant number of nanowire seeds promotes the growth selectivity on patterned graphene at the expense of the structural quality (presence of voids, stacking faults, dislocations, and inversion domains). On the contrary, the use of smaller patches (65 nm) allows to grow μ-platelets from a very limited seed number (<3 nanowires) with a significantly reduced number of extended defects. These observations have been directly related to optical measurements by cathodoluminescence and high-resolution transmission electronic microscopy observations performed on the same μ-platelets for the different graphene patch radii (65, 90, 250 nm). The formation of defects is discussed and supported by nucleation, intra- and intercoalescence mechanisms.
期刊介绍:
The aim of Crystal Growth & Design is to stimulate crossfertilization of knowledge among scientists and engineers working in the fields of crystal growth, crystal engineering, and the industrial application of crystalline materials.
Crystal Growth & Design publishes theoretical and experimental studies of the physical, chemical, and biological phenomena and processes related to the design, growth, and application of crystalline materials. Synergistic approaches originating from different disciplines and technologies and integrating the fields of crystal growth, crystal engineering, intermolecular interactions, and industrial application are encouraged.