具有界面应变补偿功能的短周期 InAs/GaSb 超晶格的单电子能谱

IF 1.4 4区物理与天体物理 Q3 PHYSICS, MULTIDISCIPLINARY

JETP Letters Pub Date : 2024-10-15 DOI:10.1134/S0021364024602185

V. S. Krivobok, G. N. Eroshenko, A. V. Muratov, S. N. Nikolaev, A. V. Klekovkin, I. I. Minaev, K. A. Savin, D. A. Pashkeev, A. R. Dubovaya, Yu. A. Aleshchenko, S. I. Chentsov

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引用次数: 0

摘要

实验首次测定了温度为 77-300 K 的 InAs/GaSb 超晶格的复折射率随频率的变化，在这种超晶格中，塑性松弛受到界面应变补偿的抑制，基本吸收边在远红外范围内。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

One-Electron Spectrum of a Short-Period InAs/GaSb Superlattice with Interface Compensation of Strains

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One-Electron Spectrum of a Short-Period InAs/GaSb Superlattice with Interface Compensation of Strains

The frequency dependence of the complex refractive index of an InAs/GaSb superlattice where plastic relaxation is suppressed by interface compensation of strains and the fundamental absorption edge falls in the far-infrared range is experimentally determined for the first time at temperatures of 77–300 K. The energy structure of the superlattice minibands and its variation with temperature are discussed.

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来源期刊

JETP Letters 物理-物理：综合

CiteScore

2.40

自引率

30.80%

发文量

164

审稿时长

3-6 weeks

期刊介绍： All topics of experimental and theoretical physics including gravitation, field theory, elementary particles and nuclei, plasma, nonlinear phenomena, condensed matter, superconductivity, superfluidity, lasers, and surfaces.