{"title":"具有 PVT 增强电路的 68.5 dB-SNDR、12.4-fJ/conv.-step、100-MS/s pipelined-SAR ADC","authors":"Haolin Han, Ruili Ren, Yi Shen, Ruixue Ding, Shubin Liu, Hongzhi Liang","doi":"10.1016/j.mejo.2024.106432","DOIUrl":null,"url":null,"abstract":"<div><div>This paper presents a signal-chain friendly 12-bit pipelined-successive approximation register (SAR) analog-to-digital converter (ADC) in 40<!--> <!-->nm CMOS, which is optimized to achieve a 68.5 dB-SNDR, 100-MS/s sample rate with 54.5<span><math><mtext>%</mtext></math></span> of maximum available input range. The implemented ADC employs an improved clock booster and latch-register to achieve high on-conductance of nmos switches and low-leakage data storage. It also explores an adaptive non-overlapping complementary clock generator and a dedicated <span><math><msub><mrow><mi>V</mi></mrow><mrow><mi>C</mi><mi>M</mi></mrow></msub></math></span> buffer to accommodate process, voltage, and temperature (PVT) conditions. The relative variation of non-overlapping time is reduced by 50<span><math><mtext>%</mtext></math></span> compared to the conventional method, and the signal-to-distortion ratio (SDR) of residue amplification is improved by 8<!--> <!-->dB . Moreover, on-chip bit weight calibration is implemented to address the gain error brought by capacitor mismatch and inner-stage gain error. The prototype ADC is simulated under 5 corners, −40 to 125<!--> <span><math><mrow><mo>°</mo><mi>C</mi></mrow></math></span>, and 1.1<!--> <!-->V<!--> <span><math><mo>±</mo></math></span> <!--> <!-->2.5<span><math><mtext>%</mtext></math></span>. For a Nyquist input, the simulated SNDR under typical corner is 68.5<!--> <!-->dB , which can remain over 66<!--> <!-->dB under PVT conditions. The achieved Walden Figure of Merit (FoM) is 12.4-fJ/conv.-step.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":null,"pages":null},"PeriodicalIF":1.9000,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 68.5 dB-SNDR, 12.4-fJ/conv.-step, 100-MS/s pipelined-SAR ADC with PVT-enhanced circuitry\",\"authors\":\"Haolin Han, Ruili Ren, Yi Shen, Ruixue Ding, Shubin Liu, Hongzhi Liang\",\"doi\":\"10.1016/j.mejo.2024.106432\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>This paper presents a signal-chain friendly 12-bit pipelined-successive approximation register (SAR) analog-to-digital converter (ADC) in 40<!--> <!-->nm CMOS, which is optimized to achieve a 68.5 dB-SNDR, 100-MS/s sample rate with 54.5<span><math><mtext>%</mtext></math></span> of maximum available input range. The implemented ADC employs an improved clock booster and latch-register to achieve high on-conductance of nmos switches and low-leakage data storage. It also explores an adaptive non-overlapping complementary clock generator and a dedicated <span><math><msub><mrow><mi>V</mi></mrow><mrow><mi>C</mi><mi>M</mi></mrow></msub></math></span> buffer to accommodate process, voltage, and temperature (PVT) conditions. The relative variation of non-overlapping time is reduced by 50<span><math><mtext>%</mtext></math></span> compared to the conventional method, and the signal-to-distortion ratio (SDR) of residue amplification is improved by 8<!--> <!-->dB . Moreover, on-chip bit weight calibration is implemented to address the gain error brought by capacitor mismatch and inner-stage gain error. The prototype ADC is simulated under 5 corners, −40 to 125<!--> <span><math><mrow><mo>°</mo><mi>C</mi></mrow></math></span>, and 1.1<!--> <!-->V<!--> <span><math><mo>±</mo></math></span> <!--> <!-->2.5<span><math><mtext>%</mtext></math></span>. For a Nyquist input, the simulated SNDR under typical corner is 68.5<!--> <!-->dB , which can remain over 66<!--> <!-->dB under PVT conditions. The achieved Walden Figure of Merit (FoM) is 12.4-fJ/conv.-step.</div></div>\",\"PeriodicalId\":49818,\"journal\":{\"name\":\"Microelectronics Journal\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2024-10-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronics Journal\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S187923912400136X\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S187923912400136X","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A 68.5 dB-SNDR, 12.4-fJ/conv.-step, 100-MS/s pipelined-SAR ADC with PVT-enhanced circuitry
This paper presents a signal-chain friendly 12-bit pipelined-successive approximation register (SAR) analog-to-digital converter (ADC) in 40 nm CMOS, which is optimized to achieve a 68.5 dB-SNDR, 100-MS/s sample rate with 54.5 of maximum available input range. The implemented ADC employs an improved clock booster and latch-register to achieve high on-conductance of nmos switches and low-leakage data storage. It also explores an adaptive non-overlapping complementary clock generator and a dedicated buffer to accommodate process, voltage, and temperature (PVT) conditions. The relative variation of non-overlapping time is reduced by 50 compared to the conventional method, and the signal-to-distortion ratio (SDR) of residue amplification is improved by 8 dB . Moreover, on-chip bit weight calibration is implemented to address the gain error brought by capacitor mismatch and inner-stage gain error. The prototype ADC is simulated under 5 corners, −40 to 125 , and 1.1 V 2.5. For a Nyquist input, the simulated SNDR under typical corner is 68.5 dB , which can remain over 66 dB under PVT conditions. The achieved Walden Figure of Merit (FoM) is 12.4-fJ/conv.-step.
期刊介绍:
Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems.
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