具有 PVT 增强电路的 68.5 dB-SNDR、12.4-fJ/conv.-step、100-MS/s pipelined-SAR ADC

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Haolin Han, Ruili Ren, Yi Shen, Ruixue Ding, Shubin Liu, Hongzhi Liang
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引用次数: 0

摘要

本文介绍了一种信号链友好型 12 位流水线-逐次逼近寄存器 (SAR) 模数转换器 (ADC),采用 40 nm CMOS 工艺,经过优化可实现 68.5 dB-SNDR、100-MS/s 采样率和 54.5% 的最大可用输入范围。所实现的 ADC 采用了改进的时钟升压器和锁存器,以实现 nmos 开关的高导通和低漏电数据存储。它还采用了自适应非重叠互补时钟发生器和专用 VCM 缓冲器,以适应工艺、电压和温度 (PVT) 条件。与传统方法相比,非重叠时间的相对变化减少了 50%,残差放大的信噪比(SDR)提高了 8 dB。此外,还实现了片上位权校准,以解决电容器失配和内部级增益误差带来的增益误差问题。原型 ADC 在 5 个角、-40 至 125 °C 和 1.1 V ± 2.5% 下进行了仿真。对于奈奎斯特输入,典型角下的模拟 SNDR 为 68.5 dB,在 PVT 条件下可保持在 66 dB 以上。达到的沃顿功勋值(FoM)为 12.4-fJ/conv.-step。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 68.5 dB-SNDR, 12.4-fJ/conv.-step, 100-MS/s pipelined-SAR ADC with PVT-enhanced circuitry
This paper presents a signal-chain friendly 12-bit pipelined-successive approximation register (SAR) analog-to-digital converter (ADC) in 40 nm CMOS, which is optimized to achieve a 68.5 dB-SNDR, 100-MS/s sample rate with 54.5% of maximum available input range. The implemented ADC employs an improved clock booster and latch-register to achieve high on-conductance of nmos switches and low-leakage data storage. It also explores an adaptive non-overlapping complementary clock generator and a dedicated VCM buffer to accommodate process, voltage, and temperature (PVT) conditions. The relative variation of non-overlapping time is reduced by 50% compared to the conventional method, and the signal-to-distortion ratio (SDR) of residue amplification is improved by 8 dB . Moreover, on-chip bit weight calibration is implemented to address the gain error brought by capacitor mismatch and inner-stage gain error. The prototype ADC is simulated under 5 corners, −40 to 125 °C, and 1.1 V ±  2.5%. For a Nyquist input, the simulated SNDR under typical corner is 68.5 dB , which can remain over 66 dB under PVT conditions. The achieved Walden Figure of Merit (FoM) is 12.4-fJ/conv.-step.
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来源期刊
Microelectronics Journal
Microelectronics Journal 工程技术-工程:电子与电气
CiteScore
4.00
自引率
27.30%
发文量
222
审稿时长
43 days
期刊介绍: Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
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