具有可控抗氧化氢原子转移活性的Α {Silk@Gallic-Acid} 混合材料

Annita Theofanous, Yiannis Deligiannakis, Maria Louloudi
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引用次数: 0

摘要

蚕丝纤维通常被誉为纺织材料的巅峰之作,在纺织业、健康和化妆品领域都有广泛的应用。没食子酸(GA)是一种公认的天然抗氧化剂。在本研究中,通过将没食子酸表面接枝到脱胶丝纤维(SFd)上,构思并制备了一种新型混合材料 SFd@GA。通过傅立叶变换红外光谱、拉曼光谱、热重分析(TG-DTA)和扫描电子显微镜(SEM),证实了没食子酸成功共价接枝到丝织物表面。通过对 DPPH 自由基的抗氧化氢原子转移(HAT)进行定量分析,验证了 SFd@GA 混合材料的抗氧化能力。我们的数据显示,与天然完整丝纤维相比,SFd@GA 的抗氧化氢原子转移活性提高了 550%,与脱胶丝纤维相比,SFd@GA 的抗氧化氢原子转移活性提高了 1400%。本研究的最大发现在于,混合材料 SFd@GA 可以重复使用,而其抗氧化-HAT 活性不会受到任何影响。具体来说,我们发现 SFd@GA 可以连续使用至少 15 个周期,并保持 98% 的 HAT 效能,在环境条件下可储存多日。我们将通过我们提出的可控帽活性过程来讨论这一阐述性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Α {Silk@Gallic-Acid} hybrid material with controllable antioxidant hydrogen-atom-transfer activity

Silk fiber, often acclaimed as the pinnacle of textile materials, finds contemporary applications in the textile industry, health, and cosmetics. Gallic acid (GA) is a well-established natural antioxidant. In the present study, a novel hybrid material SFd@GA was conceptualized and produced via surface grafting of GA onto degummed silk-fibers (SFd). Successful covalent-grafting of gallic acid onto the silk fabric surface was confirmed through Fourier-transform infrared, Raman, thermogravimetric analysis (TG-DTA), and scanning electron microscopy (SEM). electron paramagnetic resonance spectroscopy demonstrates that gallic moieties grafted on SFd@GA retain their radical/redox activity. The antioxidant capacity of the hybrid material SFd@GA was validated by quantitative analysis of antioxidant hydrogen-atom-transfer (HAT) to DPPH radicals. Our data reveal a 550% increase in antioxidant-HAT activity of SFd@GA versus natural intact silk fiber, and a 1400% increase in antioxidant-HAT activity compared to the degummed silk fiber. The paramount discovery of the present work lies in the capacity for repeated utilization of the hybrid material SFd@GA, without any discernible compromise in its antioxidant-HAT activity. Specifically, we show that SFd@GA can be employed for at least 15 consecutive cycles, retaining >98% of its HAT efficiency, for up to many days of storage under ambient conditions. We discuss this expositional performance via the controllable Hat-activity process that we propose.

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