适用于 5 G 应用、具有 32 db 线性增益范围的 28 GHz 平衡先导型 LNA

IF 1 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Taotao Xu, Hongchen Chen, Cao Wan, Shuai Deng, Pei Qin, Haoshen Zhu, Quan Xue
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引用次数: 0

摘要

这封信介绍了一种 28 GHz 的平衡器第一低噪声放大器(LNA),其特点是具有宽 dB 线性可变增益范围。LNA 的结构包括三级级联放大器。输入级的集成平衡器提供射频 ESD 保护,并将单端信号转换为差分信号(S-D)。为实现宽带性能,设计并分析了基于变压器的双谐振匹配网络。为了实现连续 dB 线性可变增益范围和一致的输入/输出匹配,在第二级使用 5 位数模转换器 (DAC) 实现了增益控制,增益范围为 32 dB。DAC 可以产生一个非线性模拟电压,用于控制第二级级联中共门晶体管的栅极,从而对级联放大器的非线性增益变化进行反向补偿。LNA 采用 65 纳米 CMOS 工艺制造,核心尺寸为 0.154 平方毫米。测量结果显示,最大增益为 33.5 dB,最小噪声系数 (NF) 为 3.65 dB,3-dB 带宽为 23-29.5 GHz。在 32 个不同的增益状态下,测得的可变增益范围约为 32 dB,每个状态的线性增益步长约为 1 dB,IP1dB 范围为 -6.5 dBm 至 -35.25 dBm。1.2 V 电源电压下的功耗为 35.4-48 mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 28 GHz balun-first LNA with db-linear 32 db gain range for 5 G applications

This letter presents a 28 GHz balun-first low noise amplifier (LNA) featuring a wide dB-linear variable gain range. The architecture of LNA includes three-stage cascode amplifiers. An integrated balun at the input stage provides RF ESD protection and converts a single-ended signal to a differential one (S-to-D). A transformer-based dual-resonant matching network is designed and analyzed to achieve wideband performance. To realize a continuous dB-linear variable gain range and consistent input/output matching, gain control is implemented in the second stage using a 5-bit digital-to-analog converter (DAC) for a 32 dB gain range. The DAC can generate a nonlinear analog voltage to control the gate of the common-gate transistor in the second cascode stage, inversely compensating for the nonlinear gain variations of the cascode amplifier. The LNA is fabricated in 65-nm CMOS process with a core size of 0.154 mm². Measurement results exhibit a maximum gain of 33.5 dB and a minimum noise figure (NF) of 3.65 dB with a 3-dB bandwidth of 23–29.5 GHz. The measured variable gain range is approximately 32 dB across 32 different gain states, with a linear gain step of ~1 dB per state and an IP1dB ranging from −6.5 dBm to −35.25 dBm. The power consumption is 35.4–48 mW from a 1.2 V supply voltage.

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来源期刊
Microwave and Optical Technology Letters
Microwave and Optical Technology Letters 工程技术-工程:电子与电气
CiteScore
3.40
自引率
20.00%
发文量
371
审稿时长
4.3 months
期刊介绍: Microwave and Optical Technology Letters provides quick publication (3 to 6 month turnaround) of the most recent findings and achievements in high frequency technology, from RF to optical spectrum. The journal publishes original short papers and letters on theoretical, applied, and system results in the following areas. - RF, Microwave, and Millimeter Waves - Antennas and Propagation - Submillimeter-Wave and Infrared Technology - Optical Engineering All papers are subject to peer review before publication
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