掺锡二氧化钛薄膜增强电催化氢气进化

IF 3.9 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Science and Engineering B-advanced Functional Solid-state Materials Pub Date : 2024-10-09 DOI:10.1016/j.mseb.2024.117753

Qais M. Al-Bataineh , Lina A. Alakhras , Ahmad A. Ahmad , Gabriela Toader , Ahmad Telfah

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引用次数: 0

摘要

基于金属氧化物纳米复合材料的电催化剂分水技术在氢气进化应用中获得了极大的关注。本文介绍了用于高效制氢的未掺杂二氧化钛和掺锡二氧化钛薄膜（分别为 TiO2 和 Sn/TiO2）。晶体结构分析是通过使用里特维尔德精炼法和威廉姆森-霍尔法分析 XRD 图谱进行的。XRF 扫描用于确认 Sn 和 TiO2 之间的掺杂机制。未掺杂的 TiO2 和 Sn/TiO2 薄膜的带隙能分别为 3.33 和 3.15 eV。另一方面，未掺杂 TiO2 和 Sn/TiO2 薄膜的电导率值分别为 0.10 和 0.25 mS.cm-1。通过恒电位仪测量和分析方法这两种不同的方法研究了未掺杂 TiO2 和 Sn/TiO2 薄膜的电化学产氢性能。结果表明，与未掺杂的 TiO2 薄膜相比，Sn/TiO2 薄膜具有更高的 HER 性能和 H2 生成效率。

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Tin-doped titanium dioxide film-enhanced electrocatalytic hydrogen evolution

Electrocatalyst water-splitting based on metal oxide nanocomposites has gained considerable interest in hydrogen evolution applications. Here, undoped titanium dioxide and tin-doped titanium dioxide films (TiO₂ and Sn/TiO₂, respectively) are presented for highly efficient H₂ production applications. The crystal structure analysis is performed by analyzing the XRD patterns using the Rietveld refinement method and the Williamson-Hall method. XRF scans are used to confirm the doping mechanism between Sn and TiO₂. The bandgap energies of undoped TiO₂ and Sn/TiO₂ films are 3.33 and 3.15 eV, respectively. On the other hand, the electrical conductivity values of undoped TiO₂ and Sn/TiO₂ films are 0.10 and 0.25 mS.cm⁻¹, respectively. The electrochemical H₂ production performance of undoped TiO₂ and Sn/TiO₂ films is investigated through two different methods: potentiostat measurements and analytical methods. It can be concluded that the Sn/TiO₂ film exhibits higher HER performance and H₂ production efficiency than the undoped TiO₂ film.

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来源期刊

Materials Science and Engineering B-advanced Functional Solid-state Materials 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.