{"title":"电压和频率对带有三苯胺层的 MIS 电容器电气特性的影响","authors":"","doi":"10.1016/j.physb.2024.416606","DOIUrl":null,"url":null,"abstract":"<div><div>This study examines the effect of triphenylamine (TPA) interlayers on the electrical properties of Al/TPA/p-Si metal-interlayer/insulator material-semiconductor (MIS) capacitors. Using Gaussian software, TPA molecular structure was optimized, and HOMO-LUMO energy levels were simulated. Capacitance-conductance-voltage (<em>C</em>-<em>G</em>-<em>V</em>) measurements were performed at room temperature over −4 V to +4 V and 50 kHz–700 kHz. AFM and SEM analysis showed TPA films were smooth with a uniform thickness of about 178 nm. The <em>C</em>-<em>V</em> characteristics revealed a frequency-dependent decrease in capacitance, indicating a continuous distribution of interface states. Barrier height (Φ<sub>B</sub>) increased from 0.305 eV at 50 kHz to 0.655 eV at 700 kHz, while the active interface trap density (<em>D</em><sub><em>it</em></sub>) decreased from 6.73 × 10<sup>12</sup> eV<sup>−1</sup> cm<sup>−2</sup> to 3.23 × 10<sup>11</sup> eV<sup>−1</sup> cm<sup>−2</sup>. Additionally, the accumulating region exhibited low series resistance values (between 6.88 and 8.44 Ω). These results suggest that TPA thin films are effective for MIS capacitors.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Impact of voltage and frequency on electrical characteristics of MIS capacitors with triphenylamine layer\",\"authors\":\"\",\"doi\":\"10.1016/j.physb.2024.416606\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>This study examines the effect of triphenylamine (TPA) interlayers on the electrical properties of Al/TPA/p-Si metal-interlayer/insulator material-semiconductor (MIS) capacitors. Using Gaussian software, TPA molecular structure was optimized, and HOMO-LUMO energy levels were simulated. Capacitance-conductance-voltage (<em>C</em>-<em>G</em>-<em>V</em>) measurements were performed at room temperature over −4 V to +4 V and 50 kHz–700 kHz. AFM and SEM analysis showed TPA films were smooth with a uniform thickness of about 178 nm. The <em>C</em>-<em>V</em> characteristics revealed a frequency-dependent decrease in capacitance, indicating a continuous distribution of interface states. Barrier height (Φ<sub>B</sub>) increased from 0.305 eV at 50 kHz to 0.655 eV at 700 kHz, while the active interface trap density (<em>D</em><sub><em>it</em></sub>) decreased from 6.73 × 10<sup>12</sup> eV<sup>−1</sup> cm<sup>−2</sup> to 3.23 × 10<sup>11</sup> eV<sup>−1</sup> cm<sup>−2</sup>. Additionally, the accumulating region exhibited low series resistance values (between 6.88 and 8.44 Ω). These results suggest that TPA thin films are effective for MIS capacitors.</div></div>\",\"PeriodicalId\":20116,\"journal\":{\"name\":\"Physica B-condensed Matter\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-10-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physica B-condensed Matter\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0921452624009475\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica B-condensed Matter","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0921452624009475","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Impact of voltage and frequency on electrical characteristics of MIS capacitors with triphenylamine layer
This study examines the effect of triphenylamine (TPA) interlayers on the electrical properties of Al/TPA/p-Si metal-interlayer/insulator material-semiconductor (MIS) capacitors. Using Gaussian software, TPA molecular structure was optimized, and HOMO-LUMO energy levels were simulated. Capacitance-conductance-voltage (C-G-V) measurements were performed at room temperature over −4 V to +4 V and 50 kHz–700 kHz. AFM and SEM analysis showed TPA films were smooth with a uniform thickness of about 178 nm. The C-V characteristics revealed a frequency-dependent decrease in capacitance, indicating a continuous distribution of interface states. Barrier height (ΦB) increased from 0.305 eV at 50 kHz to 0.655 eV at 700 kHz, while the active interface trap density (Dit) decreased from 6.73 × 1012 eV−1 cm−2 to 3.23 × 1011 eV−1 cm−2. Additionally, the accumulating region exhibited low series resistance values (between 6.88 and 8.44 Ω). These results suggest that TPA thin films are effective for MIS capacitors.
期刊介绍:
Physica B: Condensed Matter comprises all condensed matter and material physics that involve theoretical, computational and experimental work.
Papers should contain further developments and a proper discussion on the physics of experimental or theoretical results in one of the following areas:
-Magnetism
-Materials physics
-Nanostructures and nanomaterials
-Optics and optical materials
-Quantum materials
-Semiconductors
-Strongly correlated systems
-Superconductivity
-Surfaces and interfaces