基于非富勒烯受体 ITIC 的高性能三元有机光电倍增探测器

IF 4.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Yao Li , Xiaogang Chen , Jun Lan , Fenqiang Wang , Kailiang Bai , Hu Liu , Feiping Lu
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引用次数: 0

摘要

为了将响应光谱扩展到近红外区域,在 P3HT:PC61BM 共混物中掺入了一种非富勒烯受体 ITIC,制备了结构为 ITO/PEDOT:PSS/P3HT:ITIC:PC61BM(100:x:1, wt/wt/wt)/Al 的有机光放大探测器(OPMD)。测量和分析了活性层薄膜的吸收光谱和光致发光光谱以及器件的电流密度-电压特性,并研究了器件的光放大原理。结果表明,三元 P3HT:ITIC:PC61BM 有源层实现了 400-850 nm 的宽光谱响应,基于 P3HT:ITIC:PC61BM 的三元 OPMD 的外量子效率、响应度和比检测度均大于基于 P3HT:PC61BM 的二元 OPMD,最大外量子效率为 1113.当三元有源层中 ITIC 的质量比为 4 %(即 x = 4)时,在 850 nm 波长和 -16 V 偏置下可获得 71 % 的最大外部量子效率、6.42 × 1013 Jones 的特定检测率和 762.99 A/W 的光致发光率、x = 4).之所以能取得如此显著的性能,是因为在 P3HT:PC61BM 中掺入 ITIC 可以将有源层的吸收光谱扩大到近红外区域,并增加有源层中的电子陷阱密度和激子解离界面,形成级联能级,从而实现更好的载流子传输。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High performance ternary organic photomultiplication detectors based on non-fullerene acceptor ITIC
To extend response spectrum to near infrared region, one non-fullerene acceptor ITIC was doped into P3HT:PC61BM blends, and the organic photomultiplication detectors (OPMDs) with structure of ITO/PEDOT:PSS/P3HT:ITIC:PC61BM(100:x:1, wt/wt/wt)/Al were prepared. The absorption and photoluminescence spectra of the active layer films and the current density-voltage characteristics of the devices were measured and analyzed, and the photomultiplication principle of the devices was studied. The results showed that a wide spectral response of 400–850 nm is realized in the ternary P3HT:ITIC:PC61BM active layer, and the external quantum efficiency, responsivity and specific detectivity of the ternary OPMDs based on P3HT:ITIC:PC61BM are all larger than those of the binary ones based on P3HT:PC61BM, and a maximum external quantum efficiency of 1113.71 %, specific detectivity of 6.42 × 1013 Jones and photoresponsivity of 762.99 A/W are obtained at 850 nm and under −16 V bias when the ITIC mass ratio in the ternary active layer is 4 % (i.e., x = 4). Such a considerable performance can be due to the fact that doping ITIC into P3HT:PC61BM can widen absorption spectrum of active layer to near infrared area, and increase electron trap density and exciton dissociation interfaces in active layer and create cascade energy levels for better carrier transport.
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来源期刊
Sensors and Actuators A-physical
Sensors and Actuators A-physical 工程技术-工程:电子与电气
CiteScore
8.10
自引率
6.50%
发文量
630
审稿时长
49 days
期刊介绍: Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...
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