{"title":"宽带高PSR OCL LDO,采用增益松弛 OTA,具有动态复零点频率补偿功能","authors":"Ahmad M.K. Almonaier , Adel Barakat , Seham Abd-Elsamee , Nihal F.F. Areed","doi":"10.1016/j.aeue.2024.155537","DOIUrl":null,"url":null,"abstract":"<div><div>This article proposes an Output-Capacitor-Less (OCL) Low-Dropout (LDO) regulator with an assisted positive feedback loop technique, which mimics a negative resistance, along with a single common-gate stage. Conventional techniques utilize multistage high-gain OTA to achieve a high DC loop gain. However, such an OTA suffers from high power consumption and sophisticated frequency compensation mechanisms. Instead, the use of a single-stage relatively low-gain OTA helps to extend the bandwidth. Then, the overall DC loop gain is maximized by the proposal of a novel negative resistance circuit. To further improve the PSR, a bulk-driven ripple canceling path that is insensitive to process corners is proposed making the LDO suitable for high-PSR applications. Stability is another challenge in the design of OCL LDOs due to its associated complex poles. We propose a new frequency compensation technique by introducing two complex zeros to eliminate these complex poles. Hence, the overall stability is improved. Since these complex poles location vary from light to heavy loads, the proposed zeros dynamically change accordingly. Besides, this suggested mechanism has been analyzed using the generalized time-and-transfer constants (TTCs) circuit analysis technique. Under heavy load conditions, the suggested LDO has attained phase and gain margins of 62.8° and 29 dB, respectively. Moreover, Monte Carlo simulations along with process and temperature variations have been investigated to prove the reliability of such a frequency compensation technique. The proposed LDO has been implemented in 65 nm CMOS technology node with a short pass transistor length of <span><math><mrow><mn>100</mn><mspace></mspace><mspace></mspace><mi>nm</mi></mrow></math></span>. The simulation results reveals that the LDO draws <span><math><mrow><mn>299</mn><mo>.</mo><mn>4</mn><mspace></mspace><mspace></mspace><mi>μ</mi><mi>A</mi></mrow></math></span> of quiescent current under light load conditions and <span><math><mrow><mn>296</mn><mo>.</mo><mn>8</mn><mspace></mspace><mspace></mspace><mi>μ</mi><mi>A</mi></mrow></math></span> under heavy load conditions (including the bandgap voltage reference). The suggested LDO functions at <span><math><mrow><mn>1</mn><mo>.</mo><mn>2</mn><mspace></mspace><mspace></mspace><mi>V</mi></mrow></math></span> supply voltage, delivers <span><math><mrow><mn>0</mn><mo>.</mo><mn>93</mn><mspace></mspace><mspace></mspace><mi>V</mi></mrow></math></span> output voltage and can handle a load current up to <span><math><mrow><mn>10</mn><mspace></mspace><mspace></mspace><mspace></mspace><mi>mA</mi></mrow></math></span> with load regulation of <span><math><mrow><mn>17</mn><mspace></mspace><mspace></mspace><mspace></mspace><mi>μ</mi><mi>V/mA</mi></mrow></math></span>, line regulation of <span><math><mrow><mn>2</mn><mo>.</mo><mn>22</mn><mspace></mspace><mspace></mspace><mspace></mspace><mi>mV/V</mi></mrow></math></span>, and PSR of <span><math><mrow><mo>−</mo><mn>48</mn><mo>.</mo><mn>7</mn><mspace></mspace><mspace></mspace><mspace></mspace><mi>dB</mi></mrow></math></span> at low frequencies. The PSR at <span><math><mrow><mn>1</mn><mspace></mspace><mi>MHz</mi></mrow></math></span> is at least <span><math><mrow><mo>−</mo><mn>32</mn><mo>.</mo><mn>5</mn><mspace></mspace><mspace></mspace><mspace></mspace><mi>dB</mi></mrow></math></span> which is superior to the reported recent LDOs.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"187 ","pages":"Article 155537"},"PeriodicalIF":3.0000,"publicationDate":"2024-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A wideband high-PSR OCL LDO using a gain-relaxed OTA featuring dynamic complex zeros frequency compensation\",\"authors\":\"Ahmad M.K. Almonaier , Adel Barakat , Seham Abd-Elsamee , Nihal F.F. Areed\",\"doi\":\"10.1016/j.aeue.2024.155537\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>This article proposes an Output-Capacitor-Less (OCL) Low-Dropout (LDO) regulator with an assisted positive feedback loop technique, which mimics a negative resistance, along with a single common-gate stage. Conventional techniques utilize multistage high-gain OTA to achieve a high DC loop gain. However, such an OTA suffers from high power consumption and sophisticated frequency compensation mechanisms. Instead, the use of a single-stage relatively low-gain OTA helps to extend the bandwidth. Then, the overall DC loop gain is maximized by the proposal of a novel negative resistance circuit. To further improve the PSR, a bulk-driven ripple canceling path that is insensitive to process corners is proposed making the LDO suitable for high-PSR applications. Stability is another challenge in the design of OCL LDOs due to its associated complex poles. We propose a new frequency compensation technique by introducing two complex zeros to eliminate these complex poles. Hence, the overall stability is improved. Since these complex poles location vary from light to heavy loads, the proposed zeros dynamically change accordingly. Besides, this suggested mechanism has been analyzed using the generalized time-and-transfer constants (TTCs) circuit analysis technique. Under heavy load conditions, the suggested LDO has attained phase and gain margins of 62.8° and 29 dB, respectively. Moreover, Monte Carlo simulations along with process and temperature variations have been investigated to prove the reliability of such a frequency compensation technique. The proposed LDO has been implemented in 65 nm CMOS technology node with a short pass transistor length of <span><math><mrow><mn>100</mn><mspace></mspace><mspace></mspace><mi>nm</mi></mrow></math></span>. The simulation results reveals that the LDO draws <span><math><mrow><mn>299</mn><mo>.</mo><mn>4</mn><mspace></mspace><mspace></mspace><mi>μ</mi><mi>A</mi></mrow></math></span> of quiescent current under light load conditions and <span><math><mrow><mn>296</mn><mo>.</mo><mn>8</mn><mspace></mspace><mspace></mspace><mi>μ</mi><mi>A</mi></mrow></math></span> under heavy load conditions (including the bandgap voltage reference). The suggested LDO functions at <span><math><mrow><mn>1</mn><mo>.</mo><mn>2</mn><mspace></mspace><mspace></mspace><mi>V</mi></mrow></math></span> supply voltage, delivers <span><math><mrow><mn>0</mn><mo>.</mo><mn>93</mn><mspace></mspace><mspace></mspace><mi>V</mi></mrow></math></span> output voltage and can handle a load current up to <span><math><mrow><mn>10</mn><mspace></mspace><mspace></mspace><mspace></mspace><mi>mA</mi></mrow></math></span> with load regulation of <span><math><mrow><mn>17</mn><mspace></mspace><mspace></mspace><mspace></mspace><mi>μ</mi><mi>V/mA</mi></mrow></math></span>, line regulation of <span><math><mrow><mn>2</mn><mo>.</mo><mn>22</mn><mspace></mspace><mspace></mspace><mspace></mspace><mi>mV/V</mi></mrow></math></span>, and PSR of <span><math><mrow><mo>−</mo><mn>48</mn><mo>.</mo><mn>7</mn><mspace></mspace><mspace></mspace><mspace></mspace><mi>dB</mi></mrow></math></span> at low frequencies. The PSR at <span><math><mrow><mn>1</mn><mspace></mspace><mi>MHz</mi></mrow></math></span> is at least <span><math><mrow><mo>−</mo><mn>32</mn><mo>.</mo><mn>5</mn><mspace></mspace><mspace></mspace><mspace></mspace><mi>dB</mi></mrow></math></span> which is superior to the reported recent LDOs.</div></div>\",\"PeriodicalId\":50844,\"journal\":{\"name\":\"Aeu-International Journal of Electronics and Communications\",\"volume\":\"187 \",\"pages\":\"Article 155537\"},\"PeriodicalIF\":3.0000,\"publicationDate\":\"2024-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Aeu-International Journal of Electronics and Communications\",\"FirstCategoryId\":\"94\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1434841124004230\",\"RegionNum\":3,\"RegionCategory\":\"计算机科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Aeu-International Journal of Electronics and Communications","FirstCategoryId":"94","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1434841124004230","RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
本文提出了一种无输出电容(OCL)低压差(LDO)稳压器,该稳压器采用辅助正反馈环路技术(模拟负阻)和单共栅级。传统技术利用多级高增益 OTA 实现高直流环路增益。然而,这种 OTA 存在功耗高、频率补偿机制复杂等问题。相反,使用单级相对低增益 OTA 有助于扩展带宽。然后,通过采用新型负阻电路,最大限度地提高了整体直流环路增益。为了进一步提高 PSR,还提出了一种对工艺拐角不敏感的批量驱动纹波消除路径,使 LDO 适用于高 PSR 应用。由于相关的复杂极点,稳定性是 OCL LDO 设计中的另一个挑战。我们提出了一种新的频率补偿技术,通过引入两个复零点来消除这些复极点。因此,整体稳定性得到了提高。由于从轻负载到重负载,这些复极点的位置会发生变化,因此建议的零点也会相应地发生动态变化。此外,我们还利用广义时间和转移常数(TTCs)电路分析技术对这一建议机制进行了分析。在重负载条件下,建议的 LDO 的相位和增益裕度分别达到 62.8° 和 29 dB。此外,还对蒙特卡罗模拟以及工艺和温度变化进行了研究,以证明这种频率补偿技术的可靠性。所提出的 LDO 采用 65 纳米 CMOS 技术节点,通过晶体管长度较短,仅为 100 纳米。仿真结果显示,LDO 在轻负载条件下的静态电流为 299.4μA,在重负载条件下为 296.8μA(包括带隙电压基准)。建议的 LDO 在 1.2V 电源电压下工作,输出电压为 0.93V,可处理高达 10mA 的负载电流,负载调节为 17μV/mA,线路调节为 2.22mV/V,低频 PSR 为 -48.7dB。1MHz 时的 PSR 至少为 -32.5dB,优于最新报告的 LDO。
A wideband high-PSR OCL LDO using a gain-relaxed OTA featuring dynamic complex zeros frequency compensation
This article proposes an Output-Capacitor-Less (OCL) Low-Dropout (LDO) regulator with an assisted positive feedback loop technique, which mimics a negative resistance, along with a single common-gate stage. Conventional techniques utilize multistage high-gain OTA to achieve a high DC loop gain. However, such an OTA suffers from high power consumption and sophisticated frequency compensation mechanisms. Instead, the use of a single-stage relatively low-gain OTA helps to extend the bandwidth. Then, the overall DC loop gain is maximized by the proposal of a novel negative resistance circuit. To further improve the PSR, a bulk-driven ripple canceling path that is insensitive to process corners is proposed making the LDO suitable for high-PSR applications. Stability is another challenge in the design of OCL LDOs due to its associated complex poles. We propose a new frequency compensation technique by introducing two complex zeros to eliminate these complex poles. Hence, the overall stability is improved. Since these complex poles location vary from light to heavy loads, the proposed zeros dynamically change accordingly. Besides, this suggested mechanism has been analyzed using the generalized time-and-transfer constants (TTCs) circuit analysis technique. Under heavy load conditions, the suggested LDO has attained phase and gain margins of 62.8° and 29 dB, respectively. Moreover, Monte Carlo simulations along with process and temperature variations have been investigated to prove the reliability of such a frequency compensation technique. The proposed LDO has been implemented in 65 nm CMOS technology node with a short pass transistor length of . The simulation results reveals that the LDO draws of quiescent current under light load conditions and under heavy load conditions (including the bandgap voltage reference). The suggested LDO functions at supply voltage, delivers output voltage and can handle a load current up to with load regulation of , line regulation of , and PSR of at low frequencies. The PSR at is at least which is superior to the reported recent LDOs.
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