掺钴氮化铝的合成、相组成、电子和光谱特性

IF 2.8 3区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER
{"title":"掺钴氮化铝的合成、相组成、电子和光谱特性","authors":"","doi":"10.1016/j.physb.2024.416593","DOIUrl":null,"url":null,"abstract":"<div><div>The article presents a comprehensive study of the synthesis, phase formation, electronic structure, and optical properties of cobalt-doped aluminum oxynitride Al<sub>5</sub>O<sub>6</sub>N (AlON) in the concentration range of 0.01–5 at%. The solubility limit of cobalt in AlON is found to be 0.1–0.2 at% compared to Al. No corundum is detected even at the lowest cobalt content (0.01 at%), but a low amount of AlN and Co or Co<sub>4</sub>N is observed. Cobalt ions are incorporated into AlON with the typical oxidation state of Co<sup>2+</sup> and form Co–O and Co–N bonds in a ratio of 92/8. The bandgap (E<sub>g</sub>) and lattice parameters of AlON:Co are found to be in the range of 5.72–5.84 eV and 7.9411–7.9539 Å, respectively, and are influenced by the oxygen content. Pulsed cathodoluminescence spectra show five emission bands, with some attributed to (V<sub>Al</sub>–O<sub>N</sub>)-type defects. The luminescence intensity of AlON:Co decreases with higher contents of cobalt ions.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Synthesis, phase composition, electronic and spectroscopic properties of cobalt-doped aluminum oxynitride\",\"authors\":\"\",\"doi\":\"10.1016/j.physb.2024.416593\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>The article presents a comprehensive study of the synthesis, phase formation, electronic structure, and optical properties of cobalt-doped aluminum oxynitride Al<sub>5</sub>O<sub>6</sub>N (AlON) in the concentration range of 0.01–5 at%. The solubility limit of cobalt in AlON is found to be 0.1–0.2 at% compared to Al. No corundum is detected even at the lowest cobalt content (0.01 at%), but a low amount of AlN and Co or Co<sub>4</sub>N is observed. Cobalt ions are incorporated into AlON with the typical oxidation state of Co<sup>2+</sup> and form Co–O and Co–N bonds in a ratio of 92/8. The bandgap (E<sub>g</sub>) and lattice parameters of AlON:Co are found to be in the range of 5.72–5.84 eV and 7.9411–7.9539 Å, respectively, and are influenced by the oxygen content. Pulsed cathodoluminescence spectra show five emission bands, with some attributed to (V<sub>Al</sub>–O<sub>N</sub>)-type defects. The luminescence intensity of AlON:Co decreases with higher contents of cobalt ions.</div></div>\",\"PeriodicalId\":20116,\"journal\":{\"name\":\"Physica B-condensed Matter\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physica B-condensed Matter\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0921452624009347\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica B-condensed Matter","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0921452624009347","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0

摘要

文章全面研究了掺钴氧化铝 Al5O6N(AlON)的合成、相形成、电子结构和光学特性,其浓度范围为 0.01-5 at%。与铝相比,钴在 AlON 中的溶解极限为 0.1-0.2 at%。即使在钴含量最低(0.01 at%)的情况下,也没有检测到刚玉,但可以观察到少量的 AlN 和 Co 或 Co4N。钴离子以 Co2+ 的典型氧化态结合到 AlON 中,并以 92/8 的比例形成 Co-O 和 Co-N 键。研究发现,AlON:Co 的带隙(Eg)和晶格参数分别在 5.72-5.84 eV 和 7.9411-7.9539 Å 范围内,并受氧含量的影响。脉冲阴极发光光谱显示出五条发射带,其中一些带归因于 (VAl-ON) 型缺陷。AlON:Co 的发光强度随着钴离子含量的增加而降低。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Synthesis, phase composition, electronic and spectroscopic properties of cobalt-doped aluminum oxynitride
The article presents a comprehensive study of the synthesis, phase formation, electronic structure, and optical properties of cobalt-doped aluminum oxynitride Al5O6N (AlON) in the concentration range of 0.01–5 at%. The solubility limit of cobalt in AlON is found to be 0.1–0.2 at% compared to Al. No corundum is detected even at the lowest cobalt content (0.01 at%), but a low amount of AlN and Co or Co4N is observed. Cobalt ions are incorporated into AlON with the typical oxidation state of Co2+ and form Co–O and Co–N bonds in a ratio of 92/8. The bandgap (Eg) and lattice parameters of AlON:Co are found to be in the range of 5.72–5.84 eV and 7.9411–7.9539 Å, respectively, and are influenced by the oxygen content. Pulsed cathodoluminescence spectra show five emission bands, with some attributed to (VAl–ON)-type defects. The luminescence intensity of AlON:Co decreases with higher contents of cobalt ions.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Physica B-condensed Matter
Physica B-condensed Matter 物理-物理:凝聚态物理
CiteScore
4.90
自引率
7.10%
发文量
703
审稿时长
44 days
期刊介绍: Physica B: Condensed Matter comprises all condensed matter and material physics that involve theoretical, computational and experimental work. Papers should contain further developments and a proper discussion on the physics of experimental or theoretical results in one of the following areas: -Magnetism -Materials physics -Nanostructures and nanomaterials -Optics and optical materials -Quantum materials -Semiconductors -Strongly correlated systems -Superconductivity -Surfaces and interfaces
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信