A. S. Komolov, I. A. Pronin, E. F. Lazneva, V. S. Sobolev, E. A. Dubov, A. A. Komolova, E. V. Zhizhin, D. A. Pudikov, S. A. Pshenichnyuk, Ch. S. Becker, M. S. Kazantsev, F. Dj. Akbarova, U. B. Sharopov
{"title":"氧化硅和逐层生长的氧化锌表面超薄呋喃-苯基共聚物薄膜导带的电子状态","authors":"A. S. Komolov, I. A. Pronin, E. F. Lazneva, V. S. Sobolev, E. A. Dubov, A. A. Komolova, E. V. Zhizhin, D. A. Pudikov, S. A. Pshenichnyuk, Ch. S. Becker, M. S. Kazantsev, F. Dj. Akbarova, U. B. Sharopov","doi":"10.1134/S1063774524601266","DOIUrl":null,"url":null,"abstract":"<p>The results of studying the electronic states of the conduction band of ultrathin films of furan-phenylene co-oligomer 1,4-bis(5-phenylfuran-2-yl)benzene and the results of analyzing the interfacial potential barrier upon the formation of these films on the surfaces of (SiO<sub>2</sub>)<i>n</i>-Si and layer-by-layer deposited ZnO are presented. The formation of a (8–10)-nm-thick co-oligomer film was investigated by total current spectroscopy; the energy range from 5 to 20 eV above <i>E</i><sub>F</sub> was analyzed. Furan-phenylene co-oligomer films on the (SiO<sub>2</sub>)<i>n</i>-Si surface have a domain structure with a characteristic domain size of ~1 × 1 µm and surface roughness within a domain of no more than 1 nm. The films on the ZnO surface have a granular structure with a grain height of 40–50 nm.</p>","PeriodicalId":527,"journal":{"name":"Crystallography Reports","volume":"69 4","pages":"556 - 560"},"PeriodicalIF":0.6000,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electronic States of the Conduction Band of Ultrathin Furan-Phenylene Co-Oligomer Films on the Surfaces of Oxidized Silicon and Layer-by-Layer Grown Zinc Oxide\",\"authors\":\"A. S. Komolov, I. A. Pronin, E. F. Lazneva, V. S. Sobolev, E. A. Dubov, A. A. Komolova, E. V. Zhizhin, D. A. Pudikov, S. A. Pshenichnyuk, Ch. S. Becker, M. S. Kazantsev, F. Dj. Akbarova, U. B. Sharopov\",\"doi\":\"10.1134/S1063774524601266\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The results of studying the electronic states of the conduction band of ultrathin films of furan-phenylene co-oligomer 1,4-bis(5-phenylfuran-2-yl)benzene and the results of analyzing the interfacial potential barrier upon the formation of these films on the surfaces of (SiO<sub>2</sub>)<i>n</i>-Si and layer-by-layer deposited ZnO are presented. The formation of a (8–10)-nm-thick co-oligomer film was investigated by total current spectroscopy; the energy range from 5 to 20 eV above <i>E</i><sub>F</sub> was analyzed. Furan-phenylene co-oligomer films on the (SiO<sub>2</sub>)<i>n</i>-Si surface have a domain structure with a characteristic domain size of ~1 × 1 µm and surface roughness within a domain of no more than 1 nm. The films on the ZnO surface have a granular structure with a grain height of 40–50 nm.</p>\",\"PeriodicalId\":527,\"journal\":{\"name\":\"Crystallography Reports\",\"volume\":\"69 4\",\"pages\":\"556 - 560\"},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2024-09-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Crystallography Reports\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1134/S1063774524601266\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"CRYSTALLOGRAPHY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Crystallography Reports","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1134/S1063774524601266","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
Electronic States of the Conduction Band of Ultrathin Furan-Phenylene Co-Oligomer Films on the Surfaces of Oxidized Silicon and Layer-by-Layer Grown Zinc Oxide
The results of studying the electronic states of the conduction band of ultrathin films of furan-phenylene co-oligomer 1,4-bis(5-phenylfuran-2-yl)benzene and the results of analyzing the interfacial potential barrier upon the formation of these films on the surfaces of (SiO2)n-Si and layer-by-layer deposited ZnO are presented. The formation of a (8–10)-nm-thick co-oligomer film was investigated by total current spectroscopy; the energy range from 5 to 20 eV above EF was analyzed. Furan-phenylene co-oligomer films on the (SiO2)n-Si surface have a domain structure with a characteristic domain size of ~1 × 1 µm and surface roughness within a domain of no more than 1 nm. The films on the ZnO surface have a granular structure with a grain height of 40–50 nm.
期刊介绍：
Crystallography Reports is a journal that publishes original articles short communications, and reviews on various aspects of crystallography: diffraction and scattering of X-rays, electrons, and neutrons, determination of crystal structure of inorganic and organic substances, including proteins and other biological substances; UV-VIS and IR spectroscopy; growth, imperfect structure and physical properties of crystals; thin films, liquid crystals, nanomaterials, partially disordered systems, and the methods of studies.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
