逐层沉积 Cd0.4Zn0.6S 和 r-GO 复合薄膜（Cd0.4Zn0.6S:r-GO）半导体的电子、电学和磁学特性变化

IF 1.9 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Bulletin of Materials Science Pub Date : 2024-09-23 DOI:10.1007/s12034-024-03302-4

Sekhar Chandra Ray

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引用次数: 0

摘要

硫化镉锌（Cd0.4Zn0.6S）和还原型氧化石墨烯（r-GO）通过 DIP 涂层技术在硅基底上逐层沉积，制备出 Cd0.4Zn0.6S：r-GO 复合薄膜半导体。在此过程中，首先在硅基板（Cd0.4Zn0.6S/Si）上沉积 Cd0.4Zn0.6S 的水溶液并在 500°C 温度下烘烤，然后在（Cd0.4Zn0.6S/Si）上沉积 r-GO 的水溶液并在相同温度下烘烤，从而制造出（r-GO/Cd0.4Zn0.6S/Si）复合薄膜半导体。(Cd0.4Zn0.6S:r-GO)/硅复合薄膜半导体的结构/电子/电气/磁性能在界面缺陷、杂质、金属/非金属离子（Cd2+/Zn2+）/（S2-、SO32-）交换态密度以及从 r-GO 中移入的不同 O 功能基的作用下得到增强。预计 Cd0.4Zn0.6S:r-GO 复合薄膜半导体能够在未来提供前景广阔的光电和磁性器件应用。

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Electronic, electrical and magnetic behavioural changes of layer by layer deposited Cd0.4Zn0.6S and r-GO composites thin film (Cd0.4Zn0.6S:r-GO) semiconductors

Cd_0.4Zn_0.6S:r-GO composite thin film semiconductor is prepared by the process of layer by layer deposition of cadmium zinc sulphide (Cd_0.4Zn_0.6S) and reduced graphene oxide (r-GO) on Si-substrate by DIP-coating technique. In this process, initially, aqueous solution of Cd_0.4Zn_0.6S is deposited on Si-substrate (Cd_0.4Zn_0.6S/Si) and baked at 500°C temperature, then, aqueous solution of r-GO is deposited on (Cd_0.4Zn_0.6S/Si) and baked at the same temperature to fabricate (r-GO/Cd_0.4Zn_0.6S/Si) composite thin film semiconductors. Structural/electronic/electrical/magnetic properties of (Cd_0.4Zn_0.6S:r-GO)/Si composite thin film semiconductor is enhanced in the vicinity of interfacial defects, impurities, density of states with exchange of metallic/non-metallic ions (Cd²⁺/Zn²⁺)/(S²⁻, SO₃²⁻) along with the incorporation of different O-functional radicals that immigrate from r-GO. It is expected that the Cd_0.4Zn_0.6S:r-GO composite thin film semiconductor is capable of providing future promising optoelectronic as well as magnetic device-based applications.

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来源期刊

Bulletin of Materials Science 工程技术-材料科学：综合

CiteScore

3.40

自引率

5.60%

发文量

209

审稿时长

11.5 months

期刊介绍： The Bulletin of Materials Science is a bi-monthly journal being published by the Indian Academy of Sciences in collaboration with the Materials Research Society of India and the Indian National Science Academy. The journal publishes original research articles, review articles and rapid communications in all areas of materials science. The journal also publishes from time to time important Conference Symposia/ Proceedings which are of interest to materials scientists. It has an International Advisory Editorial Board and an Editorial Committee. The Bulletin accords high importance to the quality of articles published and to keep at a minimum the processing time of papers submitted for publication.