高补偿半导体的电子特性：HR-GaAs:Cr 材料

IF 0.4 4区物理与天体物理 Q4 PHYSICS, MULTIDISCIPLINARY

Russian Physics Journal Pub Date : 2024-09-20 DOI:10.1007/s11182-024-03273-3

O. P. Tolbanov

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引用次数: 0

摘要

研究发现，当 n-GaAs 的导电性被 NCr 铬原子补偿时，HR-GaAs:Cr 材料就形成了，从而在带隙中部形成高度局部化的受体态。这种结构的特点是电阻率（ρmax）极高，超过了其本身半导体的电阻率（ρi）（ρmax ≥ ρi），而且非平衡电子的寿命（τn）较长，决定了它的高光敏性。因此，它可以应用于各种功能器件的基本电子元件中。

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Electronic Properties of Highly Compensated Semiconductors: The HR-GaAs:Cr Material

It is found out that the HR-GaAs:Cr material is formed when the conductivity of n-GaAs is compensated by N_Cr chromium atoms, resulting in highly localized acceptor states at the mid of the bandgap. Such a structure is characterized by both the extremely high resistivity (ρ_max), exceeding the resistance (ρ_i) of its own semiconductor (ρ_max ≥ ρ_i), and the prolonged lifetime (τ_n) of non-equilibrium electrons, determining its high photosensitivity. Thus, it can be implemented in various basic electronic components for functional devices.

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来源期刊

Russian Physics Journal PHYSICS, MULTIDISCIPLINARY-

CiteScore

1.00

自引率

50.00%

发文量

208

审稿时长

3-6 weeks

期刊介绍： Russian Physics Journal covers the broad spectrum of specialized research in applied physics, with emphasis on work with practical applications in solid-state physics, optics, and magnetism. Particularly interesting results are reported in connection with: electroluminescence and crystal phospors; semiconductors; phase transformations in solids; superconductivity; properties of thin films; and magnetomechanical phenomena.